Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	MATSUI KANEKI; TANETANI MOTOTAKA; YAMAGUCHI MASAHIRO; MORIMOTO TAIJI; MATSUMOTO AKIHIRO; KANEIWA SHINJI
	1988-09-19
专利权人	SHARP CORP
公开日期	1988-09-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To stably operate a high output for a long period by forming a current injecting region in a discontinuous injecting region near the end face of resonance. CONSTITUTION:A V-shaped groove 19 is formed at the center of an n-type GaAs current blocking layer 12, and a p-type GaAlAs clad layer 13 of upper layer is contacted with a p-type GaAs substrate 11 of lower layer. That is, a current flows to an active layer 14 in a stripelike region provided with the groove 19. A plurality of grooves 22 are formed at near the end faces 20, 21 of a resonator, the layer 12 is buried, and since the layer 13 is not contacted with the substrate 11 in the region of the groove 22, it can block a current to the layer 14 Thus, since the density of injecting current to the layer 14 located near the end face of resonance is reduced as compared with the center of the resonator, heat generation near the end face is suppressed at the time of operating at a high output, and an oversaturation absorber effect does not occur.
其他摘要	用途：通过在谐振端面附近的不连续注入区域形成电流注入区域，长时间稳定地运行高输出。组成：在n型GaAs电流阻挡层12的中心形成V形槽19，上层的p型GaAlAs包层13与下层的p型GaAs基板11接触。也就是说，电流流到设置有凹槽19的条状区域中的有源层14.多个凹槽22形成在谐振器的端面20,21附近，层12被掩埋，并且由于该层如图13所示，在沟槽22的区域中不与基板11接触，它可以阻挡到层14的电流。因此，与位于共振端面附近的层14的注入电流的密度相比，减小了。在谐振器的中心，在高输出操作时抑制端面附近的发热，并且不会发生过饱和吸收效应。
申请日期	1987-03-13
专利号	JP1988224387A
专利状态	失效
申请号	JP1987058487
公开（公告）号	JP1988224387A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/83050
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	MATSUI KANEKI,TANETANI MOTOTAKA,YAMAGUCHI MASAHIRO,et al. Semiconductor laser device. JP1988224387A[P]. 1988-09-19.

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