Manufacture of semiconductor device

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	Manufacture of semiconductor device
其他题名	Manufacture of semiconductor device
	NAKAMURA TOMOJI
	1986-05-07
专利权人	FUJITSU LTD
公开日期	1986-05-07
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent Au in the uppermost layer from diffusing in a semiconductor by coating a semiconductor contacting layer with the first titanium layer, then heat treating as prescribed, and then sequentially coating the first titanium layer with the second titanium layer, a platinum layer, and metal to form electrodes. CONSTITUTION:A p type InP layer 2 is accumulated on an n type InP substrate 1, a V-shaped groove is formed at the position for forming an active region, then n type InP layers 3, 3A, n type InGaAsP layers 4, 4A are sequentially accumulated, and an n type InGaAsP layer 4A forms an active region. Then, a p type InGaAsP layer 6 is sequentially accumulated as a p type InP layer 5 and a contacting layer, and the first Ti layer 7 is coated on the layer 6 by electron beam depositing as a p type electrode. It is heat treated in hydrogen atmosphere, then the second Ti layer 1 Pt layer 8 are sequentially coated, and an Au layer 9 is coated by electrolytically plated thereon. After an Au-Ge- Ni layer is coated an an n type electrode 10, an alloy layer is formed by heat treating to take an ohmic contact, cleaved in the direction parallel to the paper to form a resonator, thereby completing a laser.
其他摘要	目的：为了防止最上层中的Au通过用第一钛层涂覆半导体接触层而在半导体中扩散，然后按照规定进行热处理，然后依次用第二钛层，铂层，和金属以形成电极。构成：在n型InP衬底1上积累p型InP层2，在用于形成有源区的位置处形成V形槽，然后形成n型InP层3,3A，n型InGaAsP层4,4A并且n型InGaAsP层4A形成有源区。然后，依次积累p型InGaAsP层6作为p型InP层5和接触层，并且通过电子束沉积将第一Ti层7涂覆在层6上作为p型电极。在氢气气氛中进行热处理，然后依次涂覆第二Ti层1Pt层8，并通过电解电镀在其上涂覆Au层9。在Au-Ge-Ni层被覆n型电极10之后，通过热处理形成合金层以进行欧姆接触，在与纸平行的方向上切割以形成谐振器，从而完成激光。
申请日期	1984-10-09
专利号	JP1986089664A
专利状态	失效
申请号	JP1984211731
公开（公告）号	JP1986089664A
IPC 分类号	H01L21/28 \| H01L29/43 \| H01L33/14 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01S5/042 \| H01L29/46 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/82143
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	NAKAMURA TOMOJI. Manufacture of semiconductor device. JP1986089664A[P]. 1986-05-07.

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