Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	KAWANO HIDEO
	1990-05-25
专利权人	NEC CORP
公开日期	1990-05-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce the temperature rise of the end surface of an active region, and realize large output and high reliability by arranging a current-non-injection region in the vicinity of radiation end-surface of a resonator, and making the reflectivity of the rear end-surface of the resonator higher than that of the radiation end-surface of the resonator. CONSTITUTION:A plano-convex waveguide is formed in an oscillator capable of fundamental transversal mode oscillation; a mask of SiO2 film or the like having a stripe type aperture is formed on a region except the vicinity of the radiation end-surface of a resonator 19; a P-type diffusion layer 20 is formed at a position facing a groove 12, to a depth reaching a P-clad layer 17 the mask having a stripe type aperture is etched and eliminated; a P-side electrode 21 and an N-side electrode 22 are formed; a multilayer film 24 of high reflectivity is formed on the rear end-surface 23 of the resonator, thereby forming a semiconductor laser. In the semiconductor laser obtained in this manner, the vicinity of the radiation end-surface 19 of the resonator is formed as a so-called non-injection region where the P-type diffusion layer 20 is hard to be formed, so that the temperature rise on the end-surface can be reduced. Hence, optical damage of the end-surface is hardly caused; the reflectivity of the rear end- surface 23 of the resonator is large, so that the light density can be reduced, and optical damage is hardly caused similarly to the radiation end-surface, thereby realizing large output operation.
其他摘要	用途：通过在谐振器的辐射端面附近设置非电流非注入区域，并使反射率达到，从而降低有源区端面的温度上升，实现大输出和高可靠性。谐振器的后端表面高于谐振器的辐射端面。组成：平凸波导形成在一个能够进行基本横向模式振荡的振荡器中;在除了谐振器19的辐射端面附近之外的区域上形成具有条形孔径的SiO2膜等的掩模;在面对沟槽12的位置处形成P型扩散层20，到达P-覆层17的深度，蚀刻并去除具有条形孔的掩模;形成P侧电极21和N侧电极22;在谐振器的后端表面23上形成高反射率的多层膜24，从而形成半导体激光器。在以这种方式获得的半导体激光器中，谐振器的辐射端面19的附近形成为难以形成P型扩散层20的所谓的非注入区域，从而使温度可以减少端面上升。因此，几乎不会引起端面的光学损伤;谐振器的后端表面23的反射率大，因此可以减小光密度，并且几乎不会像辐射端面那样引起光学损坏，从而实现大的输出操作。
申请日期	1988-11-17
专利号	JP1990137286A
专利状态	失效
申请号	JP1988291338
公开（公告）号	JP1990137286A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/82131
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Semiconductor laser. JP1990137286A[P]. 1990-05-25.

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