Semiconductor light emitting device

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	Semiconductor light emitting device
其他题名	Semiconductor light emitting device
	ONODERA NORIAKI
	1989-02-17
专利权人	RICOH CO LTD
公开日期	1989-02-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make it possible to take out an optical output in the direction perpendicular to the substrate, by forming a current constriction layer in the direction parallel with the principal surface of the substrate, forming a recess in the laminated section on the substrate in the direction perpendicular to the principal surface, and burying part of the light emitting layer in the recess. CONSTITUTION:In a semi-insulating GaAs layer 110 which is a constriction layer, a substantially recessed part 140 of a substantially cylindrical shape is formed at the principal surface side of a substrate 101 or the lamination side of each layer in the direction perpendicular to the substrate 101, and the lower part of the step of the substantially recessed part 140 is formed so as to reach an N-Al0.4Ga0.6As clad layer 102. And a P-GaAs layer 103 is formed so as to bury the upper part of the GaAs layer 110 and the inside of the substantially recessed part 140 of a substantially cylindrical shape. Accordingly, by flowing a current in both P-side ohmic electrode 106 and N-side ohmic electrode 107, a current is injected into the substantially recessed part 140 which is an active region, thereby producing light emission due to the recombination of carriers. With this set-up, the emitted light can be taken out as an optical output 120 from the upper opening 150 of the device vertically and upwardly of the substrate 10
其他摘要	用途：为了能够在垂直于基板的方向上取出光输出，通过在与基板的主表面平行的方向上形成电流收缩层，在基板的基板上形成凹槽。垂直于主表面的方向，并将发光层的一部分掩埋在凹槽中。组成：在作为收缩层的半绝缘GaAs层110中，基本上圆柱形的基本上凹陷的部分140形成在基板101的主表面侧或每层的层叠侧在垂直于该基板101的方向上。形成基板101，并且基本凹陷部分140的台阶的下部形成为到达N-Al0.4Ga0.6As包层102.并且形成P-GaAs层103以掩埋上部GaAs层110和基本上凹陷的部分140的内部基本上为圆柱形。因此，通过在P侧欧姆电极106和N侧欧姆电极107中流动电流，电流被注入到作为有源区的基本凹陷部分140中，从而由于载流子的复合而产生发光。利用这种设置，发射的光可以作为光学输出120从装置的上开口150垂直向上取出到基板101。
申请日期	1987-08-13
专利号	JP1989045187A
专利状态	失效
申请号	JP1987200904
公开（公告）号	JP1989045187A
IPC 分类号	H01S5/00 \| H01S5/183 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/81780
专题	半导体激光器专利数据库
作者单位	RICOH CO LTD
推荐引用方式 GB/T 7714	ONODERA NORIAKI. Semiconductor light emitting device. JP1989045187A[P]. 1989-02-17.

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