Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser | |
其他题名 | Semiconductor laser |
AYABE MASAAKI; MATSUDA OSAMU; MORI YOSHIFUMI | |
1984-01-25 | |
专利权人 | SONY KK |
公开日期 | 1984-01-25 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To obtain a laser which can be readily manufactured and has uniform characteristics by forming a region which internally limits the current by utilizing the resultant difference of diffusing phenomena of impurity between the oblique part and the flat part of a hetero junction. CONSTITUTION:An oblique surface 1a1 which is extended in one direction is formed on the surface of a p type GaAs substrate 1, a p type GaAs buffer layer 7, a P type AlGaAs layer 8, an n type AlGaAs layer 9 are laminated and epitaxially grown on the entire surface which includes the surface. Then, an n type AlGaAs layer 10, a p type layer 4 which is formed to be flat while burying the oblique surface 1a1 produced so far, an AlGaAs active layer 2 which does not specify the conductive type, an n type AlGaAs clad layer 3, and an n type GaAs layer 14 are laminated and grown on the layer. A current passage 13 is naturally produced on the oblique surface of the layer 10 during the step of continuously epitaxially growing, and limited at the part 5 of the layer 10 which surrounds it. In this manner, the formation is simplified, thereby enhancing the mass productivity. |
其他摘要 | 目的:通过利用杂结的倾斜部分和平坦部分之间的杂质扩散现象的所得差异,形成内部限制电流的区域,以获得易于制造并具有均匀特性的激光器。组成:在一个方向上延伸的倾斜表面1a1形成在p型GaAs衬底1的表面上,p型GaAs缓冲层7,P型AlGaAs层8,n型AlGaAs层9被层叠并外延生长在整个表面包括表面。然后,n型AlGaAs层10,形成为平坦的p型层4,同时掩埋到目前为止产生的倾斜表面1a1,没有指定导电类型的AlGaAs有源层2,n型AlGaAs包层3,在该层上层叠并生长n型GaAs层14。在连续外延生长的步骤期间,在层10的倾斜表面上自然地产生电流通道13,并限制在围绕它的层10的部分5处。以这种方式,简化了形成,从而提高了批量生产率。 |
申请日期 | 1982-07-15 |
专利号 | JP1984014688A |
专利状态 | 失效 |
申请号 | JP1982123481 |
公开(公告)号 | JP1984014688A |
IPC 分类号 | H01S5/00 | H01S5/20 | H01S5/223 | H01S5/24 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/81446 |
专题 | 半导体激光器专利数据库 |
作者单位 | SONY KK |
推荐引用方式 GB/T 7714 | AYABE MASAAKI,MATSUDA OSAMU,MORI YOSHIFUMI. Semiconductor laser. JP1984014688A[P]. 1984-01-25. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1984014688A.PDF(256KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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