Xi'an Institute of Optics and Precision Mechanics,CAS
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其他题名 | - |
HAYASHI SHOJI; KOBAYASHI MASAMICHI; SAWAI MASAAKI; ICHIKI MASAHIRO; NAKA HIROSHI | |
1993-01-14 | |
专利权人 | HITACHI LTD |
公开日期 | 1993-01-14 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To reduce the rate of generation of a short circuit by a projecting electrode section by preventing the extension of an anode electrode section in the periphery of a laser chip, bevelling the corner sections of the anode electrode section and further keeping the anode electrode section away from the corners of the laser chip. CONSTITUTION:The main surface side of a substrate 4 except an electrode contact region in multilayer growth layers 2 is coated with an insulating film 12. An anode electrode 3 consisting of an Au group electrode is formed on the main surface side of the substrate 4. The anode electrode 3 extends in the peripheral section of a laser chip 1 corresponding to the end section of a resonator, but other peripheral sections are separated from the periphery of the laser chip 1 by size such as approximately 50mum. Four corners of the anode electrode 3 corresponding to the corner sections of the laser chip 1 consisting of a rectangle are bevelled. Consequently, when a wafer is divided, probability in which a broken section reaches to the anode electrode section 3 is reduced extremely even when the corner of the laser chip 1 taking the rectangule is broken. Accordingly, the electrode does not hang down due to the breaking of the corner section of the laser chip 1, and the rate of generation of a short circuit can be reduced. |
其他摘要 | 用途:通过防止激光芯片周边的阳极电极部分的延伸来降低突出电极部分产生短路的速率,使阳极电极部分的角部分倒角并进一步保持阳极电极部分远离激光芯片的角落。组成:除了多层生长层2中的电极接触区域之外的基板4的主表面侧涂有绝缘膜12.在基板4的主表面侧上形成由Au基电极组成的阳极电极3。阳极电极3在对应于谐振器的端部的激光器芯片1的外围部分中延伸,但是其他外围部分与激光器芯片1的外围分开诸如大约50μm的尺寸。对应于由矩形构成的激光芯片1的角部分的阳极电极3的四个角是斜切的。因此,当分割晶片时,即使当取出矩形的激光芯片1的角部破裂时,破裂部分到达阳极电极部分3的概率也极大地降低。因此,由于激光芯片1的拐角部分的断裂,电极不会下垂,并且可以降低短路的产生率。 |
申请日期 | 1984-04-13 |
专利号 | JP1993003155B2 |
专利状态 | 失效 |
申请号 | JP1984072819 |
公开(公告)号 | JP1993003155B2 |
IPC 分类号 | H01L27/15 | H01S | H01L | H01S5/227 | H01S5/00 | H01S5/042 | H01S5/02 | H01L21/301 | H01L33/00 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/81185 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | HAYASHI SHOJI,KOBAYASHI MASAMICHI,SAWAI MASAAKI,et al. -. JP1993003155B2[P]. 1993-01-14. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1993003155B2.PDF(270KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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