Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	YOSHIKAWA AKIO; HIRAYAMA FUKUICHI; KUME MASAHIRO; TAJIRI FUMIKO; HAMADA TAKESHI
	1986-03-14
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1986-03-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain the titled device of single lateral mode oscillation, low threshold current value action, and low noise characteristic by a method wherein a multilayer thin film having the double-hetero structure containing an active layer is formed on a conductive substrate including a groove of specific shape and dimension which cuts the P-N junction. CONSTITUTION:The groove 8 that cuts the P-N junction is provided in conductive substrates 1 and 2 having the P-N junction so as to be deep at the center, gradually shallower right and left, and 4.5-6.0mum in its width (d) at the substrate surface, and multilayer thin films 3-6 having the double-hetero structure containing the active layer 4 are formed on the substrate including the groove 8. For example, an N type GaAs current block layer 2 is grown on the P type GaAs substrate 1, and the stripe grown 8 reaching the substrate 1 is formed by chemical etching. Thereafter, a P type Ga1-xAlxAs clad layer 3, a Ga1-yAlyAs active layer 4, an N type Ga1-xAlxAs clad layer 5, and an N type GaAs cap layer 6 are successively grown by the liquid phase epitaxial method, and ohmic electrodes 7 are provided on the upper and lower surfaces.
其他摘要	目的：通过一种方法获得单侧模振荡，低阈值电流值作用和低噪声特性的标题器件，其中在包括沟槽的导电基板上形成具有包含有源层的双异质结构的多层薄膜切割PN结的特定形状和尺寸。组成：切割PN结的凹槽8设置在具有PN结的导电基板1和2中，以便在中心深处，左右逐渐变浅，并且在其宽度（d）处为4.5-6.0mum。在包括沟槽8的基板上形成具有包含有源层4的双异质结构的多层薄膜3-6。例如，在P型GaAs衬底上生长N型GaAs电流阻挡层2。通过化学蚀刻形成到达基板1的条纹生长8。之后，通过液相外延法连续生长P型Ga1-xAlxAs包层3，Ga1-yAlyAs有源层4，N型Ga1-xAlxAs包层5和N型GaAs盖层6，并且欧姆电极7设置在上表面和下表面上。
申请日期	1984-08-22
专利号	JP1986051983A
专利状态	失效
申请号	JP1984174604
公开（公告）号	JP1986051983A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/81132
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOSHIKAWA AKIO,HIRAYAMA FUKUICHI,KUME MASAHIRO,et al. Semiconductor laser device. JP1986051983A[P]. 1986-03-14.

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