Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	YOSHIKAWA AKIO; TAJIRI FUMIKO; KUME MASAHIRO; HIRAYAMA FUKUICHI; HAMADA TAKESHI
	1986-03-14
专利权人	MATSUSHITA ELECTRIC IND CO LTD
公开日期	1986-03-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain the titled device of single lateral mode oscillation, low threshold current value action, and low noise characteristic by a method wherein a multilayer film having the double-hetero structure cntaining an active layer is formed on a conductive substrate including two ridges adjacent to a groove of specific shape and dimensiona which cuts the P/N junction. CONSTITUTION:The groove 10 which cuts the P/N junction between two ridges 8 and 9 is provided between the two adjacent ridges of conductive substrates 1 and 2 having the P/N junction so as to be deep at the center, gradually shallower right and left, and 4.5-6.0mum in its width (d) in the substrate surface; besides, multilayer thin films 3-6 having the double-hetero structure containing the active layer 4 are formed on the conductive substrates including the two ridges 8 and 9 adjacent to the groove 10. For example, the ridge 8 is provided on the P type GaAs substrate 1 in stripe form by chemical etching, and an N type GaAs layer 2 is grown thereon by the method of liquid phase epitaxial growth; then, the ridge 9 and the groove 10 are formed thereto. Thereafterm a P type Ga1-x AlxAs clad layer 3, the GBa1-yAlyAs active layer 4, an N type GA1-xAlxAs clad layer 5, and an N type GaAs cap layer 6 are successively grown.
其他摘要	目的：通过一种方法获得单侧模振荡，低阈值电流值作用和低噪声特性的标题器件，其中在包括两个相邻脊的导电基板上形成具有保持有源层的双异质结构的多层膜在特定形状和尺寸的凹槽中切割P / N结。组成：切割两个脊8和9之间的P / N结的凹槽10设置在具有P / N结的导电基板1和2的两个相邻脊之间，以便在中心深处，逐渐变浅，并且左，并且在基板表面的宽度（d）为4.5-6.0μm;此外，在包括与凹槽10相邻的两个脊8和9的导电基板上形成具有包含有源层4的双异质结构的多层薄膜3-6。例如，脊8设置在P型上通过化学蚀刻以条形形式的GaAs衬底1，通过液相外延生长的方法在其上生长N型GaAs层2;然后，脊9和凹槽10形成在其上。此后，依次生长P型Ga1-xAlxAs包层3，GBa1-yAlyAs有源层4，N型GA1-xAlxAs包层5和N型GaAs盖层6。
申请日期	1984-08-22
专利号	JP1986051984A
专利状态	失效
申请号	JP1984174605
公开（公告）号	JP1986051984A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80841
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOSHIKAWA AKIO,TAJIRI FUMIKO,KUME MASAHIRO,et al. Semiconductor laser device. JP1986051984A[P]. 1986-03-14.

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