Semiconductor device and manufacture thereof

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	Semiconductor device and manufacture thereof
其他题名	Semiconductor device and manufacture thereof
	MIYAZAWA SEIICHI
	1991-12-27
专利权人	CANON INC
公开日期	1991-12-27
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent mutual diffusion and inhibit the generation of strain by producing a semiconductor device which contains AlGaAs having an Al content of 0.35 and over in a laminated layer of GaAs, and Si and the like on a substrate side from an active region at a substrate temperature of 500 deg.C and below. CONSTITUTION:On an n-GaAs substrate are laminated a 0.5mum thick Si additive GaAs 2, 5mum Si additive Aly-xAs 3 so as to select X>0.35 and over. Then, an additive-free AlyGa1-yAs optical enclosed layer 4 of 2000Angstrom is laminated thereon where y is gradually reduced down to 0.3. Then, a GaAs active layer 5 of 70Angstrom is installed and an additive-free AlzGa1-zAs optical enclosed layer 6 is laminated thereon where z is gradually increased in symmetric with the layer 4 and a 0.5mum thick Be additive AlxGa1-xAs 7, and a 0.5mum thick Be additive GaAs 8 are laminated. Then, the thickness of the substrate 1 is reduced to about 100mum where an electrode of AuGe/Ni/Au 10, and Cr/Au 9. The presence of AlGaAs 3 having Al content of 0.35 and over under the active layer 5 in between provides a semiconductor device which with-stands practical service at a temperature of 500 deg.C and below where no standard device is applicable.
其他摘要	用途：为了防止相互扩散并抑制应变的产生，通过在GaAs和Si等叠层中制造含有Al含量为0.35以上的AlGaAs的半导体器件，从基板侧的有源区开始。基板温度为500℃及以下。组成：在n-GaAs衬底上层压0.5μm厚的Si添加剂GaAs2,5μmSi添加剂Aly-xAs 3，以选择X> 0.35及以上。然后，在其上层压2000埃的无添加剂的AlyGa1-yAs光学封闭层4，其中y逐渐减小至0.3。然后，安装70埃的GaAs有源层5，并在其上层叠无添加剂的AlzGa1-zAs光学封闭层6，其中z与层4和0.5μm厚的Be添加剂AlxGa1-xAs7对称地逐渐增加，并且将0.5μm厚的Be添加剂GaAs 8层压。然后，基板1的厚度减小到约100μm，其中AuGe / Ni / Au 10和Cr / Au 9的电极。在其间的有源层5下存在Al含量为0.35以上的AlGaAs 3。一种半导体器件，其在500℃及以下的温度下具有实用的服务，其中没有适用的标准器件。
申请日期	1990-04-16
专利号	JP1991297185A
专利状态	失效
申请号	JP1990099989
公开（公告）号	JP1991297185A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80766
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	MIYAZAWA SEIICHI. Semiconductor device and manufacture thereof. JP1991297185A[P]. 1991-12-27.

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