Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	SHIKADA MINORU; EMURA KATSUMI
	1985-01-16
专利权人	NIPPON DENKI KK
公开日期	1985-01-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain high coherency with keeping single axial mode by composing the device of the semiconductor laser element comprising an oscillation frequency selecting element composed of a distributed reflection region formed in the semiconductor crystal by a diffraction grating and a reflection mirror which reflects the output beam from the laser element so as to return the element to the active layer. CONSTITUTION:A diffraction grating 3 having a wave length of 3,800Angstrom is formed on a surface of the N type InP substrate 2, further on which an N type InGaAsP light guide layer 4, an InGaAsP active layer 5 and a P type InP clad layer 6 are laminated to be grown by liquid phase epitaxial growth. Next, a stripe part 7 in which Zn is diffused is arranged in the center of the layer 6, on both sides of which the first electrode 14 is spread and the second electrode 15 is spread over the back surface of the substrate 2. Thus, a voltage is applied to the electrodes 14 and 15 to generate laser beam. At this time, the backward output beam 8 is made into parallel beams 10 by use of a lens 9, after which the beams are reflected by a reflection mirror 11 attached to a piezoelectric element 13 to generate forward output beam 12 of a narrow spectrum width.
其他摘要	目的：通过构成半导体激光器元件的装置，以保持单轴模式的高相干性，该半导体激光器元件包括由衍射光栅形成在半导体晶体中的分布反射区构成的振荡频率选择元件和反射输出光束的反射镜从激光元件发射，以使元件返回到有源层。组成：在N型InP衬底2的表面上形成波长为3800埃的衍射光栅3，再在其上形成N型InGaAsP光导层4，InGaAsP有源层5和P型InP包层6被层压以通过液相外延生长来生长。接着，在层6的中央配置扩散了Zn的条状部7，在其两侧分散第一电极14，使第二电极15扩展到基板2的背面。由此，电压被施加到电极14和15以产生激光束。此时，通过使用透镜9将反向输出光束8制成平行光束10，然后光束被安装在压电元件13上的反射镜11反射，产生窄光谱宽度的正向输出光束12。
申请日期	1983-06-28
专利号	JP1985007790A
专利状态	失效
申请号	JP1983116345
公开（公告）号	JP1985007790A
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S5/14 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80532
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	SHIKADA MINORU,EMURA KATSUMI. Semiconductor laser device. JP1985007790A[P]. 1985-01-16.

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