Semiconductor device

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor device
其他题名	Semiconductor device
	FUJITA SHIGEO; FUJITA SHIZUO; IMAIZUMI MASAYUKI; MORISHITA YOSHITAKA; OTSUKA KENICHI
	1992-01-14
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1992-01-14
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor device which emits light in a blue color at high efficiency and with good visibility by using a specific semiconductor which is lattice-matched with a substrate. CONSTITUTION:A ZnCdSSe-based mixed-crystal semiconductor epitaxial layer 24 constituted of ZnS, ZnSe, CdS and CdSe which can be easily lattice-matched to a substrate is laminated on a III-V compound semiconductor single-crystal substrate When an n-type ZnSdSse epitaxial layer 21 and a p-type ZnCdSSe epitaxial layer 23 are composed of, e.g. Zn0.4Cd0.6S and a ZnCdSSe lightemitting layer 22 is composed of Zn0.8Cd0.2S0.4Se0.6, the epitaxial layers are lattice-matched with the GaAs single-crystal substrate; the forbidden band width of the n-type ZnCdSSe epitaxial layer 21 and the p-type ZnCdSSe epitaxial layer 23 is at about 2.9eV and that of the ZnCdSSe light-emitting layer 22 is at about 2.6eV. When a voltage is applied across electrodes 31 and 32 in such a way that the electrode 31 on the substrate side is negative, carriers are injected into a light- emitting region with good efficiency, and light is emitted with high efficiency by the recombination of electrons with holes.
其他摘要	目的：通过使用与基板晶格匹配的特定半导体，获得一种高效发射蓝光并具有良好可见度的半导体器件。组成：由ZnS，ZnSe，CdS和CdSe构成的ZnCdSSe基混晶半导体外延层24，它可以很容易地与基板晶格匹配，层叠在III-V族化合物半导体单晶衬底1上。型ZnSdSse外延层21和p型ZnCdSSe外延层23由例如Zn0.4Cd0.6S和ZnCdSSe发光层22由Zn0.8Cd0.2S0.4Se0.6构成，外延层与GaAs单晶衬底晶格匹配; n型ZnCdSSe外延层21和p型ZnCdSSe外延层23的禁带宽度约为2.9eV，ZnCdSSe发光层22的禁带宽度约为2.6eV。当以使得基板侧上的电极31为负的方式跨电极31和32施加电压时，载流子以高效率注入发光区域，并且通过电子的复合以高效率发射光。有洞。
申请日期	1990-04-27
专利号	JP1992010669A
专利状态	失效
申请号	JP1990113647
公开（公告）号	JP1992010669A
IPC 分类号	H01L31/10 \| H01L33/06 \| H01L33/28 \| H01L33/30 \| H01L33/34 \| H01S5/00 \| H01L33/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80451
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	FUJITA SHIGEO,FUJITA SHIZUO,IMAIZUMI MASAYUKI,et al. Semiconductor device. JP1992010669A[P]. 1992-01-14.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1992010669A.PDF（224KB）	专利		开放获取	CC BY-NC-SA	请求全文