Xi'an Institute of Optics and Precision Mechanics,CAS
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其他题名 | - |
MUROTANI TOSHIO; ISHII JUN; OOMURA ETSUJI | |
1984-06-16 | |
专利权人 | MITSUBISHI ELECTRIC CORP |
公开日期 | 1984-06-16 |
授权国家 | 日本 |
专利类型 | 授权发明 |
摘要 | PURPOSE:To obtain a semiconductor laser having long lifetime with low oscillation threshold value by forming a multilayer of semiconductor layer by epitaxial growth in a groove formed on a substrate and forming an active region by a selective melt- back process. CONSTITUTION:A groove 15 is formed on the main surface of an N type InP substrate 1, a resist 16 is removed, and N type InP layer 7, N type InGaAsP layer 2, P type InP layer 3 are epitaxially grown. then, it is melt back in In solution containing unsaturated P. The layers 3, and then 2 are dissolved, and while the InGaAsP is dissolving, the Ga density of the In solution is increased, and N type InP is difficult to be dissolved, and the melt back can be stopped at the position designated by a broken line 10. Thereafter, the P type InP layer 8, the P type InGaAsP layer 9 are grown, an insulating film 11, and electrodes 20, 21 are formed, and there can be formed a buried hetero junction type semiconductor laser. |
其他摘要 | 目的:通过在基板上形成的凹槽中外延生长形成多层半导体层并通过选择性回熔工艺形成有源区,以获得具有低振荡阈值的长寿命的半导体激光器。组成:在N型InP衬底1的主表面上形成凹槽15,去除抗蚀剂16,并外延生长N型InP层7,N型InGaAsP层2,P型InP层3。然后,它在含有不饱和P的溶液中熔化。层3,然后2溶解,并且当InGaAsP溶解时,In溶液的Ga密度增加,并且N型InP难以溶解,然后,在虚线10所示的位置停止熔化。然后,生长P型InP层8,P型InGaAsP层9,形成绝缘膜11,形成电极20,21,可以形成掩埋异质结型半导体激光器。 |
申请日期 | 1979-11-28 |
专利号 | JP1984025399B2 |
专利状态 | 失效 |
申请号 | JP1979154793 |
公开(公告)号 | JP1984025399B2 |
IPC 分类号 | H01L21/306 | H01S5/00 | H01S5/223 | H01S5/24 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/80383 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | MUROTANI TOSHIO,ISHII JUN,OOMURA ETSUJI. -. JP1984025399B2[P]. 1984-06-16. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1984025399B2.PDF(235KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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