Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	KAWANO HIDEO
	1991-03-07
专利权人	NEC CORP
公开日期	1991-03-07
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To restrain the evaporation of P at temperature rise by making PH3 gas flow so as to obtain a semiconductor laser of high quality by a method wherein An AlGaInP semiconductor laser is formed in such a structure that a regrowth surface provided with a current block layer at its uppermost face is protected with a crystal layer which contains P. CONSTITUTION:The following are successively grown on an N-GaAs substrate 12 with a plane of a (100) orientation through an MOVPE method under a depressurized condition by the use of material such as metal III organic metal and V hidride to form a double hetero wafer: an N-GaAs buffer layer 13; an N-In0.5(Ga0.4Al0.6)0.5P clad layer 14, an In0.5Ga0.5P active layer 15; a P-In0.5(Ga0.4Al0.6)0.5P clad layer 16; a P-In0.5 Ga0.5P etching stop layer 17; an N-GaAs current block layer 18; and an In0.5Ga0.5P protective layer 19. In succession, the In0.5Ga0.5P protective layer 19 and the N-GaAs current block layer 18 are etched through a mixed solution of HCl and H2O and another mixed solution of H3PO4, H2O2, and H2O respectively to form a stripe-like groove 20 where the P-In0.5Ga0.5P etching stop layer 17 is exposed. Then, a P-GaAs contact layer 21 is grown as thick as 4mum through an MOVPE method under a depressurized condition by the user of material such as triethyl gallium and PH3. Thereafter, a P-side electrode 22 and an N-side electrode 23 are provided to the P-GaAs contact layer 21 and the underside of the substrate 12 respectively.
其他摘要	目的：通过使PH3气体流动来抑制P在温度升高时的蒸发，从而通过一种方法形成高质量的半导体激光器，其中AlGaInP半导体激光器形成为具有电流阻挡层的再生长表面的结构在其最上面用含有P的晶体层保护。组成：通过使用材料在减压条件下通过MOVPE方法在具有（100）取向的平面的N-GaAs衬底12上连续生长以下物质。例如金属III有机金属和V hidride形成双异质晶片：N-GaAs缓冲层13; N-In0.5（Ga0.4Al0.6）0.5P包层14，In0.5Ga0.5P有源层15; a P-In0.5（Ga0.4Al0.6）0.5P包层16; P-In0.5 Ga0.5P蚀刻停止层17; N-GaAs电流阻挡层18;依次通过HCl和H2O的混合溶液以及H3PO4，H2O2的另一混合溶液蚀刻In0.5Ga0.5P保护层19和N-GaAs电流阻挡层18。分别形成条状凹槽20和H2O，其中暴露出P-In0.5Ga0.5P蚀刻停止层17。然后，使用诸如三乙基镓和PH3的材料，在减压条件下通过MOVPE方法生长厚度为4μm的P-GaAs接触层21。之后，将P侧电极22和N侧电极23设置到P-GaAs接触层21和基板12的下侧。分别。
申请日期	1989-07-21
专利号	JP1991053578A
专利状态	失效
申请号	JP1989189419
公开（公告）号	JP1991053578A
IPC 分类号	H01S5/00 \| H01S5/042 \| H01S5/223 \| H01S5/323 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/80243
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Semiconductor laser. JP1991053578A[P]. 1991-03-07.

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