Manufacture of semiconductor light emitting device

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	Manufacture of semiconductor light emitting device
其他题名	Manufacture of semiconductor light emitting device
	HIRANO RIYOUICHI; OOMURA ETSUJI; HIGUCHI HIDEYO; SAKAKIBARA YASUSHI; NAMISAKI HIROBUMI; SUZAKI WATARU
	1984-07-06
专利权人	MITSUBISHI DENKI KK
公开日期	1984-07-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent deterioration in electric characteristics of a device even at a high temperature during the current conduction for a long time, by the constitution, wherein different conducting type impurities are diffused in a region forming a crystal interface, and the position of a P-N junction is moved from the interface to the inside or to the outside. CONSTITUTION:The carrier concentration of P-type impurities in a P-InP layer 4 is denoted as Np, and the carrier concentration of N-type impurities in an N-InP layer 1, which is a substrate is denoted as Nn. In this case the relationship Np>Nn is established. For example, Zn, whose diffusion is easy, is selected as the P type impurities. An InGaAsP active layer is P-type. Then, the position of the P-N junction, which is exposed to the initial atmosphere, A, B, and C, and D, E, and F is moved to the position A', B', and C', and D', E', and F' in the N-InP layer In this constitution, the exposed P-N junction interface, which becomes the cause of deterioration at a high temperature, is eliminated. As a result, a current can be concentrated in the active region 2a.
其他摘要	目的：通过在形成晶体界面的区域中扩散不同导电类型杂质的构造，以及PN的位置，即使在长时间电流传导期间即使在高温下也能防止器件的电特性劣化连接点从界面移动到内部或外部。组成：P-InP层4中P型杂质的载流子浓度表示为Np，并且作为基板的N-InP层1中的N型杂质的载流子浓度表示为Nn。在这种情况下，建立关系Np> Nn。例如，选择易扩散的Zn作为P型杂质。 InGaAsP有源层是P型。然后，暴露于初始大气A，B和C以及D，E和F的PN结的位置移动到位置A'，B'和C'，以及D'， N-InP层中的E'和F'。在这种结构中，消除了暴露的PN结界面，它成为高温劣化的原因。结果，电流可以集中在有源区2a中。
申请日期	1982-12-24
专利号	JP1984117288A
专利状态	失效
申请号	JP1982231681
公开（公告）号	JP1984117288A
IPC 分类号	H01L33/14 \| H01L33/24 \| H01L33/30 \| H01S5/00 \| H01S5/227 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/79293
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	HIRANO RIYOUICHI,OOMURA ETSUJI,HIGUCHI HIDEYO,et al. Manufacture of semiconductor light emitting device. JP1984117288A[P]. 1984-07-06.

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