Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device | |
其他题名 | Semiconductor laser device |
NAITO, YUMI; OKADA, SATORU; FUJIMOTO, TSUYOSHI | |
2001-09-04 | |
专利权人 | MITSUI CHEMICALS INC. |
公开日期 | 2001-09-04 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1-xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized. |
其他摘要 | 在n-GaAs衬底上依次形成n-GaAs缓冲层,n-AlGaAs包层,非掺杂InGaAs有源层,p-AlxGa1-xAs包层,p-GaAs接触层,以及具有条状窗口的n-AlGaAs电流阻挡层嵌入在包层中。在电流阻挡层的有源层侧界面处,形成循环凸起和凹陷形状的衍射光栅,但衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中,即,一个电流注入区域。以这种方式,可以实现具有低振荡阈值,高振荡效率,高可靠性,长寿命和稳定振荡波长的半导体激光器件。 |
申请日期 | 1998-09-30 |
专利号 | US6285699 |
专利状态 | 失效 |
申请号 | US09/163395 |
公开(公告)号 | US6285699 |
IPC 分类号 | H01S5/00 | H01S5/12 | H01S5/343 | H01S5/223 | H01S3/08 |
专利代理人 | - |
代理机构 | BIRCH,STEWART,KOLASCH & BIRCH,LLP |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/79266 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUI CHEMICALS INC. |
推荐引用方式 GB/T 7714 | NAITO, YUMI,OKADA, SATORU,FUJIMOTO, TSUYOSHI. Semiconductor laser device. US6285699[P]. 2001-09-04. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US6285699.PDF(747KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论