Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	HAMADA TAKESHI; WADA MASARU; ITOU KUNIO; SHIMIZU YUUICHI; KUME MASAHIRO
	1985-12-19
专利权人	MATSUSHITA DENKI SANGYO KK
公开日期	1985-12-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce optical absorption in the vicinity of the end surfaces of ridges, and to realize a high output by forming each layer containing an active layer onto a substrate to which two parallel ridges, width thereof is narrowed only in sections in the vicinity of the end surfaces, are formed. CONSTITUTION:The width of ridges 1a, 1b is formed in 5mum within 10mum from end surfaces and in 20mum in sections except the end surfaces. The height of the ridges 1a, 1b is shaped in 5mum, and the width of a groove between the ridges 1a, 1b is formed in 4mum. A first layer N type clad layer 2 is grown in 0.2mum in a flat section at the center, a second layer non-doped active layer 3 in approximately 0.05mum at the same position, a third layer P type clad layer 4 in approximately 5mum at the same position and a fourth layer N type cap layer 5 in thickness of approximately 0.5mum continuously on the substrate 1 through a liquid phase epitaxial method. Consequently, the film thickness dB of the active layer in the vicinity of the end surfaces of a laser chip is made thinner than that dA in the vicinity of the center, and the forbidden band width of the active layer is increased only near the end surfaces. Accordingly, since laser beams generated in the inside do not receive absorption near the end surfaces, the laser chip is difficult to be broken in the end surfaces, and extremely large optical outputs can be obtained.
其他摘要	用途：减少脊的端面附近的光学吸收，并通过将包含有源层的每层形成到基板上来实现高输出，基板上有两个平行的脊，其宽度仅在附近的部分中变窄。形成端面。组成：脊1a，1b的宽度在距离端面10mum内5mum内形成，在端面除20mum外形成。脊1a，1b的高度形状为5μm，脊1a，1b之间的槽的宽度形成为4μm。第一层N型包覆层2在中心处的平坦部分中以0.2μm生长，在相同位置处以约0.05μm的面积生长第二层非掺杂有源层3，在约5中以第三层P型包覆层4生长。通过液相外延法在基板1上连续地在相同位置处和第四层N型盖层5，其厚度约为0.5μm。因此，激光器芯片的端面附近的有源层的膜厚度dB比中心附近的dA薄，并且有源层的禁带宽度仅在端面附近增加。。因此，由于在内部产生的激光束不会在端面附近受到吸收，因此激光芯片难以在端面破裂，并且可以获得极大的光输出。
申请日期	1984-06-04
专利号	JP1985257583A
专利状态	失效
申请号	JP1984113180
公开（公告）号	JP1985257583A
IPC 分类号	H01S5/00 \| H01S5/16 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78358
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	HAMADA TAKESHI,WADA MASARU,ITOU KUNIO,et al. Semiconductor laser device. JP1985257583A[P]. 1985-12-19.

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