Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	FURUYAMA HIDETO; UEMATSU YUTAKA; KINOSHITA JIYUNICHI
	1982-09-29
专利权人	TOKYO SHIBAURA ELECTRIC CO
公开日期	1982-09-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To stabilize the oscillation mode of a semiconductor laser device, to increase the lifetime of the device and to effectively prevent the variation of an oscillation mode by forming a waveguide layer having relatively high refractive index in a region interposed between active layers. CONSTITUTION:A clad layer 2 and a waveguide layer 9 are sequentially grown in crystal on a GaAs substrate 1, and are mesa etched in a depth to the layer 2, thereby forming a mesa stripe 8. An active layer 3 and a clad layer 4 are sequentially grown in crystal on the layer 2 formed with the stripe 8. In this structure, when the refractive indexes of the layers 2, 9, 3, 4 are represented by n1, n2, n3, n4, the relationship of the refractive indexes is set to n3>n2>n4>n In this manner, the oscillation in high order mode is suppressed, only the oscillation in the basic lateral mode can be performed, and the damage of the active layer due to the light absorption can be suppressed in such a manner that the maximum point of the emitted light intensity is disposed out of the layer 3. Since the layer 9 having relatively high refractive index is disposed at the position in which the laser oscillation becomes maximum in the light intensity, the variation in the oscillation mode at high injection mode can be eliminated.
其他摘要	目的：通过在介于有源层之间的区域中形成具有相对高折射率的波导层，来稳定半导体激光器件的振荡模式，增加器件的寿命并有效地防止振荡模式的变化。组成：在GaAs衬底1上依次生长包层2和波导层9，并在深度上对层2进行台面蚀刻，从而形成台面条8.有源层3和包层4在这种结构中，当层2,9,3,4的折射率由n1，n2，n3，n4表示时，折射率的关系在层2上形成有条纹8的层2。设置为n3> n2> n4> n1。以这种方式，抑制了高阶模式中的振荡，仅可以执行基本横向模式中的振荡，并且可以以这样的方式抑制由于光吸收引起的有源层的损坏，使得最大点由于具有相对高折射率的层9设置在激光振荡在光强度中变得最大的位置，所以可以消除高注入模式下振荡模式的变化。。
申请日期	1981-03-24
专利号	JP1982157587A
专利状态	失效
申请号	JP1981042909
公开（公告）号	JP1982157587A
IPC 分类号	H01S5/00 \| H01S5/223 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/78268
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	FURUYAMA HIDETO,UEMATSU YUTAKA,KINOSHITA JIYUNICHI. Semiconductor laser device. JP1982157587A[P]. 1982-09-29.

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