Semiconductor light-emitting device

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	Semiconductor light-emitting device
其他题名	Semiconductor light-emitting device
	ITO AKIRA; TADATOMO KAZUYUKI
	1989-09-28
专利权人	三菱電線工業株式会社
公开日期	1989-09-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain the GaInPAs light-emitting element using a GaP substrate by a method wherein the multilayer, provided on the strained superlattice located on the GaP substrate, is composed of a GaInPAs active layer, an AlGaInP- clad layer containing Al or a GaInP-clad layer containing no Al. CONSTITUTION:A strained superlattice layer is formed on a GaP substrate 1, and a multilayer having a double heterojunction, namely, an AlGaInP clad layer 3, a GaInPAs active layer 4 and an AlGaInP clad layer 5, are epitaxially grown successively from the top of the strained superlattice layer 2. As the GaInPAs active layer 4 is grown on the GaP substrate 1 in this structure, this growth can be made by providing the strained superlattice layer 2 on the GaP substrate As the GaP substrate 1 and the strained superlattice layer 2, which is made of a wide bandgap material, are transparent to the radient light coming from the GaInPAs active layer 4, and also as the GaP substrate 1 has a high thermal conductivity and an excellent heat-radiating property, there is no limitation in the picking-out direction of the emitted light when an element is formed, and as a result, the designing to the element is free.
其他摘要	目的：为了使用GaP衬底获得GaInPAs发光元件，其中设置在位于GaP衬底上的应变超晶格上的多层由GaInPAs有源层构成，包含Al或GaInP的AlGaInP包覆层不含Al。构成：在GaP衬底1上形成应变超晶格层，并且从AlGaInP覆层3的顶部依次外延生长具有双异质结的多层，即AlGaInP覆层3，GaInPAs有源层4和AlGaInP覆层5在该结构中，在GaP衬底1上生长GaInPAs有源层4，可以通过在GaP衬底1上提供应变超晶格层2来进行该生长。作为GaP衬底1和应变超晶格由宽带隙材料制成的层2对来自GaInPAs有源层4的辐射光是透明的，并且由于GaP衬底1具有高的热导率和优异的热辐射性能，所以没有限制在元件形成时的发射光的取出方向上，因此，对元件的设计是自由的。
申请日期	1988-03-24
专利号	JP1989243483A
专利状态	失效
申请号	JP1988070995
公开（公告）号	JP1989243483A
IPC 分类号	H01L33/06 \| H01L33/10 \| H01L33/14 \| H01L33/16 \| H01L33/20 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/77544
专题	半导体激光器专利数据库
作者单位	三菱電線工業株式会社
推荐引用方式 GB/T 7714	ITO AKIRA,TADATOMO KAZUYUKI. Semiconductor light-emitting device. JP1989243483A[P]. 1989-09-28.

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