Semiconductor laser and manufacture thereof

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	Semiconductor laser and manufacture thereof
其他题名	Semiconductor laser and manufacture thereof
	TANAKA HARUO; MUSHIGAMI MASAHITO; FUKADA HAYAMIZU; ISHIDA YUJI; NAKADA NAOTARO
	1987-02-02
专利权人	ROHM KK
公开日期	1987-02-02
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve electrical properties and optical properties by a method wherein a stripe groove which reaches the depth where the surface of the first upper clad layer is exposed and has a tapered surface is formed in the first grown layer along the wavelength of a laser resonator and the second grown layer, constituted by the second upper clad layer opposite in conductive type to the substrate and a cap layer, is laminated on the first grown layer. CONSTITUTION:A semiconductor laser 1 is constituted by an N-type GaAs substrate 10, an N-type AlGaAs lower clad layer 21, an AlxGa1-xAs activation layer 22, the first P-type AlGaAs upper clad layer 23, a P-type GaAs protection layer 24, an N-type GaAs current limiting layer 25, the second P-type AlGaAs upper clad layer 41, a P type GaAs cap layer 42, a P-type electrode 50 and an N-type electrode 5 A stripe groove 30' which reaches the depth where the surface of the first upper clad layer 23 is exposed and has a tapered surface 31 narrowing toward the substrate 10 is formed in the first grown layer 20 along the wavelength of a laser resonator. THe second grown layer 40 is composed of the second upper clad layer 41 and a cap layer 42.
其他摘要	用途：通过一种方法改善电性能和光学性能，其中沿着激光谐振器的波长在第一生长层中形成到达第一上包层表面暴露并具有锥形表面的深度的条纹槽第二生长层，由与基板导电类型相反的第二上包层和盖层构成，层叠在第一生长层上。组成：半导体激光器1由N型GaAs衬底10，N型AlGaAs下包层21，AlxGa1-xAs活化层22，第一P型AlGaAs上包层23，P型构成GaAs保护层24，N型GaAs限流层25，第二P型AlGaAs上包层41，P +型GaAs盖层42，P型电极50和N型电极51在第一生长层20中沿着激光谐振器的波长形成条纹槽30'，该条纹槽30'到达第一上包层23的表面暴露的深度并具有朝向基板10变窄的锥形表面31。第二生长层40由第二上包层41和盖层42组成。
申请日期	1985-01-17
专利号	JP1987024680A
专利状态	失效
申请号	JP1985007254
公开（公告）号	JP1987024680A
IPC 分类号	H01L21/208 \| H01L21/203 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76886
专题	半导体激光器专利数据库
作者单位	ROHM KK
推荐引用方式 GB/T 7714	TANAKA HARUO,MUSHIGAMI MASAHITO,FUKADA HAYAMIZU,et al. Semiconductor laser and manufacture thereof. JP1987024680A[P]. 1987-02-02.

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