Manufacture of semiconductor light-emitting element

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	Manufacture of semiconductor light-emitting element
其他题名	Manufacture of semiconductor light-emitting element
	OKAZAKI JIRO
	1986-07-12
专利权人	FUJITSU LTD
公开日期	1986-07-12
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To ensure the use for a prolonged term by forming an InGaAsP contact layer, on the surface of which In particles do not adhere. CONSTITUTION:A laminated semiconductor layer is grown through a liquid phase epitaxial growth method, and a P-type InGaAsP contact layer 7 is grown in thickness of approximately 0.5mum after the growth of a layer such as a P-type InP clad layer 6 in the same manner as conventional devices, but an InP cover layer 11 is grown in thickness of approximately 0.5mum successively without completing laminating growth at that time. Consequently, the generation of In particles 10 which have adhered on the contact layer 7 can be transferred onto the cover layer 11, and the interface on which there is no In particle 10 is shaped between the contact layer 7 and the cover layer 1 The surface of the cover layer 11 is washed by a mixed liquid in which HF and HNO3 are mixed at the rate of 1: In is easy to dissolve and InP is difficult to dissolve to the mixed liquid, thus selectively removing In particles adhering on the cover layer 1 The cover layer 11 is removed through etching, thus completing the formation of the contact layer 7.
其他摘要	用途：通过形成InGaAsP接触层确保长期使用，在其表面上In颗粒不粘附。组成：通过液相外延生长方法生长叠层半导体层，并在生长诸如P型InP包层6的层之后生长厚度约为0.5μm的P型InGaAsP接触层7以与常规器件相同的方式，但InP覆盖层11连续生长厚度约为0.5μm，而此时不完成层压生长。因此，附着在接触层7上的In颗粒10的产生可以转移到覆盖层11上，并且在接触层7和覆盖层11之间形成没有In颗粒10的界面。用混合液洗涤覆盖层11的表面，其中HF和HNO3以1：1的比例混合。 In易于溶解并且InP难以溶解到混合液体中，因此选择性地去除粘附在覆盖层11上的In颗粒。通过蚀刻去除覆盖层11，从而完成接触层7的形成。
申请日期	1984-12-26
专利号	JP1986154091A
专利状态	失效
申请号	JP1984277539
公开（公告）号	JP1986154091A
IPC 分类号	H01L21/208 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/76317
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	OKAZAKI JIRO. Manufacture of semiconductor light-emitting element. JP1986154091A[P]. 1986-07-12.

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