Xi'an Institute of Optics and Precision Mechanics,CAS
Structure of semiconductor laser | |
其他题名 | Structure of semiconductor laser |
TAKAMIYA SABURO; TANAKA TOSHIO; KUME ICHIRO | |
1987-06-23 | |
专利权人 | MITSUBISHI ELECTRIC CORP |
公开日期 | 1987-06-23 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To attain a high output while keeping a basic lateral mode by making a refractive index of a first layer larger than that of a second layer by forming a groove in an epitaxial wafer on which a number of epitaxial growth layers are formed in a manner its bottom reaches the first layer among current blocks which is in contact with a substrate. CONSTITUTION:On a P-type GaAs substrate 17, a P-type AlyGa1-yAs layer (first layer) 16, an N-type AlzGa1-zAS layer (second layer) 25, an N-type GaAs layer (third layer) 15 are epitaxially grown, respectively. Further on the third layer 15, a P-type AlxGa1-xAs layer 14, an N-type AlxsiGa1-xsiAs layer 13, an N-type AletaGa1-eta layer 12 and an N-type GaAs layer 11 are epitaxially grown. The third layer 15 on the substrate 17 functions as a current block and a light absorbing layer of an epitaxial wafer 18 and the second layer 25 functions as a current block and a second waveguide. A depth of a groove 19 in the wafer 18 is formed in a manner it reaches a first layer 16 on the substrate 17 and a refractive index of the first layer 16 is made larger than that of the second layer 25, thereby providing the high output of a semiconductor laser. |
其他摘要 | 用途:通过在外延晶片上形成凹槽,使第一层的折射率大于第二层的折射率,同时保持基本横向模式,同时保持基本横向模式,在外延晶片上以某种方式形成多个外延生长层其底部到达与基板接触的当前块中的第一层。组成:在P型GaAs衬底17上,P型AlyGa1-yAs层(第一层)16,N型AlzGa1-zAS层(第二层)25,N型GaAs层(第三层)15分别是外延生长的。此外,在第三层15上,外延生长P型AlxGa1-xAs层14,N型AlxsiGa1-xsiAs层13,N型AletaGa1-eta层12和N型GaAs层11。基板17上的第三层15用作外延晶片18的电流块和光吸收层,第二层25用作电流块和第二波导。晶片18中的沟槽19的深度以其到达基板17上的第一层16的方式形成,并且第一层16的折射率大于第二层25的折射率,从而提供高输出半导体激光器 |
申请日期 | 1985-12-12 |
专利号 | JP1987139376A |
专利状态 | 失效 |
申请号 | JP1985280095 |
公开(公告)号 | JP1987139376A |
IPC 分类号 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/76107 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | TAKAMIYA SABURO,TANAKA TOSHIO,KUME ICHIRO. Structure of semiconductor laser. JP1987139376A[P]. 1987-06-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1987139376A.PDF(259KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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