Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	SAKIYAMA HAJIME; TANAKA HARUO; MUSHIGAMI MASAHITO
	1990-08-01
专利权人	ROHM CO LTD
公开日期	1990-08-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce a forward voltage by a method wherein a lower clad layer, an active layer, a first upper clad layer, a photo absorption layer and an evaporation preventive layer are laminated, a striped groove to reach the first clad layer is bored and when the groove is covered with a second upper clad layer, the first clad layer is formed into a structure consisting of two layers, which respectively have a high carrier concentration and a low carrier concentration. CONSTITUTION:An N-type AlxGa1-xAs (x=0.6) lower clad layer 3, an AlxGa1-xAs (x=0.15) active layer 4, a first upper clad layer 5, an N-type GaAs photo absorption layer 6 and an N-type AlxGa1-xAs (x=0.15) evaporation preventive layer 7 are laminated in order on an N-type GaAs substrate 2. At this time, the layer 5 is formed into a double constitution consisting of a P-type AlxGa1-xAs (x=0.6) lower layer 5a and a P AlxGa1-xAs upper layer 5b and a carrier concentration in the layer 5b is kept higher than that in the layer 5a. After this, a striped groove 9 is formed from the layer 7 down to the layer 5 and a P-type AlyGa1-yAs second upper clad layer 10 is provided on the layer 7 including this groove 9. In such a way, a series resistance is kept low by the layer 5b.
其他摘要	用途：为了通过层叠下包层，有源层，第一上包层，光吸收层和蒸发防止层的方法降低正向电压，钻出到达第一包层的条纹槽。当沟槽被第二上包层覆盖时，第一包层形成由两层组成的结构，其分别具有高载流子浓度和低载流子浓度。组成：N型AlxGa1-xAs（x = 0.6）下包层3，AlxGa1-xAs（x = 0.15）有源层4，第一上包层5，N型GaAs光吸收层6和在N型GaAs衬底2上依次层叠N型Al x Ga 1-x As（x = 0.15）蒸发防止层7.此时，层5形成由P型Al x Ga 1-x As组成的双重构成。（x = 0.6）下层5a和P + Al x Ga 1-x As上层5b和层5b中的载流子浓度保持高于层5a中的载流子浓度。此后，从层7向下到层5形成条纹凹槽9，并且在包括该凹槽9的层7上设置P型AlyGa1-yAs第二上包层10.以这种方式，串联电阻通过层5b保持低。
申请日期	1989-01-24
专利号	JP1990194681A
专利状态	失效
申请号	JP1989014345
公开（公告）号	JP1990194681A
IPC 分类号	H01L21/203 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/75955
专题	半导体激光器专利数据库
作者单位	ROHM CO LTD
推荐引用方式 GB/T 7714	SAKIYAMA HAJIME,TANAKA HARUO,MUSHIGAMI MASAHITO. Semiconductor laser. JP1990194681A[P]. 1990-08-01.

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