Semiconductor light-emitting device

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	Semiconductor light-emitting device
其他题名	Semiconductor light-emitting device
	IMANAKA KOICHI
	1989-10-20
专利权人	OMRON TATEISI ELECTRON CO
公开日期	1989-10-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To effectively confine the light in the upward and downward directions by a method wherein two or more semiconductor thin layers which have a specific energy gap and a specific refractive index and whose composition is of two different kinds are eliminated in a position corresponding to the upper part and lower part of an active layer. CONSTITUTION:A p-type clad layer 5 is formed at the upper part and an n-type clad layer 3 is formed at the lower part, of an active layer 4 as a light-emitting layer. A p-type reflection film 10 which is constituted by alternately laminating two or more sets of semiconductor thin films 11 and 12 is formed at the upper part of the layer 5. An n-type reflection film 20 which is constituted by alternately laminating two or more sets of semiconductor thin films 21 and 22 is formed at the lower part of the layer 3. In this structure, an energy gap in the layer 4 is smaller than that in other layers; a refractive index in the layer 4 is larger than that in other layers. In addition, when a light-emitting wave-length in the layer 4 is designated as lambda, a thickness of the thin films 11, 12, 21 22 is set to a value obtained by multiplying lambda/4 by a retractive index of each layer. By this setup, it is possible to enhance the light-emitting efficiency and to make effective use of emitted light.
其他摘要	用途：通过一种方法有效地将光限制在向上和向下的方向上，其中两个或多个具有特定能隙和特定折射率并且其成分为两种不同种类的半导体薄层在对应于该位置的位置被消除。活动层的上部和下部。组成：在上部形成p型覆层5，在有源层4的下部形成n型覆层3作为发光层。通过交替层叠两组或更多组半导体薄膜11和12构成的p型反射膜10形成在层5的上部.n型反射膜20通过交替层叠两个或者在层3的下部形成更多组的半导体薄膜21和22.在该结构中，层4中的能隙小于其他层中的能隙。层4中的折射率大于其他层中的折射率。另外，当层4中的发光波长被指定为λ时，薄膜11,12,21 22的厚度被设定为通过将λ/ 4乘以每层的回缩所获得的值。。通过这种设置，可以提高发光效率并有效利用发射光。
申请日期	1988-04-15
专利号	JP1989264275A
专利状态	失效
申请号	JP1988091631
公开（公告）号	JP1989264275A
IPC 分类号	H01L33/10 \| H01L33/20 \| H01L33/30 \| H01L33/40 \| H01L33/46 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74723
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRON CO
推荐引用方式 GB/T 7714	IMANAKA KOICHI. Semiconductor light-emitting device. JP1989264275A[P]. 1989-10-20.

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