Semiconductor laser

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	Semiconductor laser
其他题名	Semiconductor laser
	KAWANO HIDEO
	1990-04-18
专利权人	NEC CORP
公开日期	1990-04-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To oscillation to obtain a semiconductor laser having a high output and high reliability by having a construction in which the width of a current injection region is widened in the oscillator end faces and its vicinity than in the inside of the oscillator in an n-PCW type semiconductor laser. CONSTITUTION:A mask such as an SiO2 film is formed while changing the width of a striped opening in the inside 19 of an oscillator 19 and in the vicinity 20 of both end faces of the oscillator, and having this SiO2 film as a mask, a p-type diffusion layer 21 is formed having the width 4 to 5mum in the inside 19 of the oscillator being wide 10 to 12mum on both end faces of the oscillator in the position opposite to a groove 12 so deep as to reach a p-type clad layer 17 while later removing the mask such as the SiO2 film by etching. Next, a p-type electrode 22 and an n-type electrode 23 are formed in order to form a semiconductor laser. The semiconductor laser obtained in this way maintains basic horizontal mode oscillation due to current injection in the place having the narrow width (4 to 5mum) of the p-type diffusion layer 21 occupying the greater part of the oscillator, while in both end faces 20 of the oscillator, the width of current injection is wide so that a wide luminous region can be obtained.
其他摘要	目的：通过在振荡器端面及其附近加宽电流注入区域的宽度而不是在n-中的振荡器内部的结构来振荡以获得具有高输出和高可靠性的半导体激光器。 PCW型半导体激光器。组成：在改变振荡器19内部19和振荡器两个端面附近20的条纹开口的宽度，并以此SiO2薄膜作为掩模，形成诸如SiO2薄膜的掩模，在振荡器的两个端面上形成宽度为4至5μm的p型扩散层21，其在振荡器的两个端面上在与槽12相对的位置处宽10至12μm，以便达到p型在覆盖层17之后，通过蚀刻去除诸如SiO 2膜的掩模。接下来，形成p型电极22和n型电极23以形成半导体激光器。以这种方式获得的半导体激光器由于在p型扩散层21的窄宽度（4至5μm）占据振荡器的较大部分的位置处的电流注入而保持基本水平模式振荡，而在两个端面20中在振荡器中，电流注入的宽度很宽，从而可以获得宽的发光区域。
申请日期	1988-10-13
专利号	JP1990105484A
专利状态	失效
申请号	JP1988258645
公开（公告）号	JP1990105484A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/74670
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KAWANO HIDEO. Semiconductor laser. JP1990105484A[P]. 1990-04-18.

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