Xi'an Institute of Optics and Precision Mechanics,CAS
Manufacture of semiconductor laser | |
其他题名 | Manufacture of semiconductor laser |
SAKIYAMA HAJIME; TANAKA HARUO; MUSHIGAMI MASAHITO | |
1990-08-01 | |
专利权人 | ROHM CO LTD |
公开日期 | 1990-08-01 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To reduce a forward voltage by a method wherein when a laser is formed using a molecular beam epitaxial device, a growth process is divided into a process for growing a first upper clad layer and a process for growing a second upper clad layer and the impurity in the first clad layer is diffused in the second clad layer. CONSTITUTION:An N-type AlxGa1-xAs (x=0.6) lower clad layer 3, an AlxGa1-xAs (x=0.15) active layer 4, a P-type AlxGa1-xAs (x=0.6) first clad layer 5, an N- type GaAs photo absorption layer 6 and an N-type AlxGa1-xAs (x=0.15) evaporation preventive layer 7 are laminated in this order on an N-type GaAs substrate 2. After that, the substrate 2 is taken out outside, a striped groove 9 is formed in the layers 6 and 5, an As molecular beam is applied on the substrate 2 surface to evaporate such an impurity as an oxide being adhered on the surface and part 6a of the layer 6 and the surface 5a of the layer 5 is exposed. Then, a molecular beam is applied on the substrate 2 to adhere a P-type dopant on the surface 5a and a P-type dopant layer 5b is generated on the layer 5. |
其他摘要 | 目的:通过一种方法降低正向电压,其中当使用分子束外延器件形成激光器时,生长工艺分为生长第一上包层的工艺和生长第二上包层的工艺和第一包层中的杂质在第二包层中扩散。组成:N型AlxGa1-xAs(x = 0.6)下包层3,AlxGa1-xAs(x = 0.15)有源层4,P型AlxGa1-xAs(x = 0.6)第一包层5, N型GaAs光吸收层6和N型Al x Ga 1-x As(x = 0.15)蒸发防止层7依次层叠在N型GaAs衬底2上。之后,将衬底2取出到外面,在层6和5中形成条纹槽9,在基板2表面上施加As分子束以蒸发这样的杂质,如氧化物粘附在层6的表面和部分6a以及层6的表面5a上。第5层暴露。然后,在基板2上施加分子束,以在表面5a上粘附P型掺杂剂,并在层5上产生P型掺杂剂层5b。 |
申请日期 | 1989-01-24 |
专利号 | JP1990194682A |
专利状态 | 失效 |
申请号 | JP1989014346 |
公开(公告)号 | JP1990194682A |
IPC 分类号 | H01L21/203 | H01S5/00 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/74610 |
专题 | 半导体激光器专利数据库 |
作者单位 | ROHM CO LTD |
推荐引用方式 GB/T 7714 | SAKIYAMA HAJIME,TANAKA HARUO,MUSHIGAMI MASAHITO. Manufacture of semiconductor laser. JP1990194682A[P]. 1990-08-01. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1990194682A.PDF(170KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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