Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser and production method thereof | |
其他题名 | Semiconductor laser and production method thereof |
NAGAI, YUTAKA, C/O MITSUBISHI DENKI K.K. | |
1995-02-15 | |
专利权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
公开日期 | 1995-02-15 |
授权国家 | 欧洲专利局 |
专利类型 | 发明申请 |
摘要 | A semiconductor laser device includes: a first conductivity type semiconductor substrate (1); a first conductivity type lower cladding layer (2) on the semiconductor substrate; an active layer (3) on the upper lower layer; a second conductivity type first upper cladding (4) layer on the active layer; a second conductivity type AlzGa1-zAs light reflecting layer (5) on the first upper cladding layer, where z is equal to or larger than 0.6; a second conductivity type second upper cladding (17) layer comprising AlyGa1-yAs including a stripe shaped ridge region portion and thin film layer portions on the light reflecting layer; and first conductivity type current blocking layers disposed on the said both side thin film portions of the second upper cladding layer so as to bury the ridge region portion. Therefore, the surface defect density can be reduced from 10⁶/cm² in the prior art to 10⁴/cm², and thus the surface morphology is improved to a great extent and a high reliability semiconductor laser device having preferable device characteristics is obtained. When the total thickness of the first upper cladding layer, the light reflecting layer, the thin film layer portion of second upper cladding layer is equal to or lower than 0.3µm, there arises no idle current which otherwise arises due to the injected current being broadened in the transverse direction under the current blocking layers, whereby a preferable device characteristics is obtained. |
其他摘要 | 一种半导体激光装置,包括:第一导电型半导体衬底(1);半导体衬底上的第一导电型下包层(2);上层下层的有源层(3);在有源层上的第二导电类型的第一上包层(4);在第一上包层上的第二导电类型AlzGa1-zAs光反射层(5),其中z等于或大于0.6;第二导电型第二上包层(17),包括AlyGa1-yAs,包括条形脊区部分和在光反射层上的薄膜层部分;第一导电型电流阻挡层设置在第二上覆层的所述两侧薄膜部分上,以掩埋脊区部分。因此,表面缺陷密度可以从现有技术中的10 6 / cm 2减小到10 6 / cm 2,因此表面形态得到很大程度的改善,并且获得具有优选器件特性的高可靠性半导体激光器件。当第一上覆层,光反射层,第二上覆层的薄膜层部分的总厚度等于或小于0.3μm时,不会产生由于注入电流变宽而产生的怠速电流在电流阻挡层下方的横向上,由此获得优选的器件特性。 |
申请日期 | 1994-02-16 |
专利号 | EP0622879A3 |
专利状态 | 失效 |
申请号 | EP1994102336 |
公开(公告)号 | EP0622879A3 |
IPC 分类号 | H01S5/00 | H01S5/20 | H01S5/223 | H01S5/32 | H01S5/323 | H01S3/19 |
专利代理人 | - |
代理机构 | KUHNEN, WACKER & PARTNER |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/74562 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | NAGAI, YUTAKA, C/O MITSUBISHI DENKI K.K.. Semiconductor laser and production method thereof. EP0622879A3[P]. 1995-02-15. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
EP0622879A3.PDF(190KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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