Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	INOUE TOKUO; OGATA SHIRO; AOYAMA SHIGERU
	1989-06-20
专利权人	OMRON TATEISI ELECTRON CO
公开日期	1989-06-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To establish a stable external resonator with a high coupling efficiency by providing an external mirror which is made by coating a reflecting film on the back of a micro-Fresnel lens, and displacing the Fresnel lens with respect to a semiconductor laser using a piezoelectric element. CONSTITUTION:The back of a lens member 2 is flattened, and a reflecting film 22 such as gold or silver is formed by vaporization on the flattened part and adjusted in its reflectivity to r=1, for example. The back of the lens member 2 is fixed to a piezoelectric element 3 using a resin adhesive, and is made variable in its position on the optical axis of an emitted laser beam from a semiconductor laser 1 by means of the piezoelectric element. The emitted laser beam from the semiconductor laser 1 is collimated by the Fresnel lens 21, and reflected by the reflecting film 22 coated on the back of the flat plate micro- Fresnel lens 21, and thereby fed back in the opposite direction on the same optical axis of the emitted laser beam to the semiconductor laser
其他摘要	用途：通过在微菲涅耳透镜背面涂覆反射膜制成外部反射镜，并使用压电材料相对于半导体激光器移动菲涅耳透镜，建立一个具有高耦合效率的稳定外部谐振器元件。组成：透镜构件2的背面是扁平的，并且通过在扁平部分上蒸发形成诸如金或银的反射膜22，并且例如将其反射率调整为r = 1。透镜构件2的背面使用树脂粘合剂固定到压电元件3，并且借助于压电元件使其在来自半导体激光器1的发射激光束的光轴上的位置可变。来自半导体激光器1的发射激光束被菲涅耳透镜21准直，并被涂在平板微菲涅耳透镜21背面的反射膜22反射，从而在同一光学元件上以相反方向反馈。发射激光束的轴到半导体激光器1。
申请日期	1987-12-15
专利号	JP1989157586A
专利状态	失效
申请号	JP1987315335
公开（公告）号	JP1989157586A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/73801
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRON CO
推荐引用方式 GB/T 7714	INOUE TOKUO,OGATA SHIRO,AOYAMA SHIGERU. Semiconductor laser device. JP1989157586A[P]. 1989-06-20.

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