Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device and method of manufacturing the same | |
其他题名 | Semiconductor laser device and method of manufacturing the same |
HIROYAMA, RYOJI; INOUE, DAIJIRO; BESSHO, YASUYUKI; HATA, MASAYUKI | |
2012-06-05 | |
专利权人 | SANYO ELECTRIC CO., LTD. |
公开日期 | 2012-06-05 |
授权国家 | 美国 |
专利类型 | 授权发明 |
摘要 | A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region. |
其他摘要 | 一种半导体激光装置,包括基板和形成在基板表面上的半导体层,半导体层具有在平行于表面的第一方向上延伸的波导,其中波导形成在从半导体的中心接近第一侧的区域上激光器件在平行于表面并与第一方向交叉的第二方向上,第一区域在与波导的第一侧相对的一侧上与波导分离并且平行于第一方向延伸,第一凹陷部分与第一方向隔开在半导体激光器件的上表面上形成波导,在波导的小平面的延伸部分上,与第一区域相交并在第二方向上延伸,并且第一区域上的半导体层的厚度小于厚度除了第一区域之外的区域上的半导体层的结构。 |
申请日期 | 2011-01-06 |
专利号 | US8193016 |
专利状态 | 授权 |
申请号 | US12/985632 |
公开(公告)号 | US8193016 |
IPC 分类号 | H01L21/00 |
专利代理人 | - |
代理机构 | DITTHAVONG MORI & STEINER,P.C. |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/73729 |
专题 | 半导体激光器专利数据库 |
作者单位 | SANYO ELECTRIC CO., LTD. |
推荐引用方式 GB/T 7714 | HIROYAMA, RYOJI,INOUE, DAIJIRO,BESSHO, YASUYUKI,et al. Semiconductor laser device and method of manufacturing the same. US8193016[P]. 2012-06-05. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
US8193016.PDF(507KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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