Xi'an Institute of Optics and Precision Mechanics,CAS
| Manufacture of semiconductor device | |
| 其他题名 | Manufacture of semiconductor device |
| KONDO MASAKI; MATSUMOTO AKIHIRO; SASAKI KAZUAKI; TAKEOKA TADASHI; YAMAMOTO SABURO | |
| 1992-08-06 | |
| 专利权人 | シャープ株式会社 |
| 公开日期 | 1992-08-06 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To improve the homology of a window layer grown on a resonator end surface, and obtain a high output semiconductor laser of high oscillation efficiency whose beam shape is superior, by preventing the growth of the window layer on a multilayered structure growth surface, by covering said surface with growth inhibitor when the window layer is grown. CONSTITUTION:A semiconductor laser wherein a multilayered structure containing an active layer 104 is formed on a substrate 100 is made an inner structure. On the resonator end surface 107 thereof, a semiconductor layer whose forbidden bandwidth is larger than the active layer 104 is formed by a vapor growth method, and turned into a window layer 120. When the window layer 120 is formed, a multilayered structure growth surface 108 is covered with growth inhibitor 130. Thereby the supply of material of a semiconductor layer turning to the window layer 120 to the surface 108 is interrupted or the supply amount is reduced, so that the growth of the semiconductor layer on the surface 108 is restrained. For example, on a susceptor 130, the surface 108 is set so as to face downward, and brought into close contact with the susceptor 130. In this state, the window layer is grown. |
| 其他摘要 | 目的：为了提高在谐振器端面上生长的窗口层的同源性，并通过防止窗口层在多层结构生长表面上生长，获得具有高振荡效率且光束形状优越的高输出半导体激光器，当窗口层生长时，用生长抑制剂覆盖所述表面。组成：一种半导体激光器，其中包含有源层104的多层结构形成在基板100上，制成内部结构。在其谐振器端面107上，通过气相生长方法形成禁带宽度大于有源层104的半导体层，并且变成窗口层120.当形成窗口层120时，多层结构生长表面因此，中断向窗口层120转向表面108的半导体层的材料供应或者减少供应量，从而抑制表面108上的半导体层的生长。 。例如，在基座130上，表面108被设定为面向下，并与基座130紧密接触。在这种状态下，窗口层生长。 |
| 申请日期 | 1990-12-18 |
| 专利号 | JP1992216688A |
| 专利状态 | 失效 |
| 申请号 | JP1990402956 |
| 公开（公告）号 | JP1992216688A |
| IPC 分类号 | H01S5/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/71035 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | KONDO MASAKI,MATSUMOTO AKIHIRO,SASAKI KAZUAKI,et al. Manufacture of semiconductor device. JP1992216688A[P]. 1992-08-06. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1992216688A.PDF（133KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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