Manufacture of semiconductor laser device

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	Manufacture of semiconductor laser device
其他题名	Manufacture of semiconductor laser device
	SAKAKIBARA YASUSHI; NAKAJIMA YASUO; WATANABE HITOSHI; TAKEMOTO AKIRA
	1991-06-24
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1991-06-24
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce in size a semiconductor laser having small harmonic wave distortion by composing a resistor for altering current junction ratio of 2-electrode DFB laser of a metal film resistor disposed at the side of a laser. CONSTITUTION:Two metal film resistors 15, 25 and a bonding pad 27 are disposed at the side of a 2-electrode DFB laser. Then, a front side electrode 3, a metal film resistor 16 and the resistor 15, the pad 27 are connected, and a rear side electrode 4 is connected to one end of the resistor 25. Then, a prober stylus is stood on the surface of the resistor 25, a closed circuit with the pad 27 is formed, and a DC current and a modulated current are injected to the laser An optical output at this time is received by a photodiode, and a harmonic wave distortion is measured. The position of the stylus is varied while monitoring the value of the harmonic wave distortion, the position of the resistor when the distortion is minimum or satisfies specifications is determined, and a bonding wire is connected to the position 26.
其他摘要	目的：通过组成一个电阻器来改变具有小谐波失真的半导体激光器，以改变设置在激光器侧面的金属膜电阻器的2电极DFB激光器的电流结比率。组成：两个金属膜电阻器15,25和焊盘27设置在2电极DFB激光器的侧面。然后，连接前侧电极3，金属膜电阻器16和电阻器15，焊盘27，并且将后侧电极4连接到电阻器25的一端。然后，在表面上放置探针电子笔在电阻器25中，形成具有焊盘27的闭合电路，并且将DC电流和调制电流注入激光器此时的光输出由光电二极管接收，并测量谐波失真。在监视谐波失真的值的同时改变触笔的位置，确定当失真最小或满足规格时电阻器的位置，并且将接合线连接到位置26。
申请日期	1989-11-01
专利号	JP1991147387A
专利状态	失效
申请号	JP1989286184
公开（公告）号	JP1991147387A
IPC 分类号	H01S5/00 \| H01S5/026 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70957
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	SAKAKIBARA YASUSHI,NAKAJIMA YASUO,WATANABE HITOSHI,et al. Manufacture of semiconductor laser device. JP1991147387A[P]. 1991-06-24.

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