Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	ADACHI AKIHIRO; YAMASHITA JUNICHIRO
	1990-07-16
专利权人	MITSUBISHI ELECTRIC CORP
公开日期	1990-07-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a high reflection coupling efficiency eta with a semiconductor laser device and a narrow emission spectrum width with a structure of a small size by using a silicon crystal having a reflecting surface formed to a spherical surface, with its center at the laser beam emitting point and, at the same time, an incident surface also formed to a spherical surface, with its center at the laser beam emitting point. CONSTITUTION:A rear emitted light beam 2 emitted from the rear emitting end face 3 of a semiconductor laser chip 1 is made incident on the plane of incidence 10 of a silicon crystal 9. Since the plane of incidence 10 is a spherical surface having its center at the emitting point of the rear emitted light 2, the light beam advances straight without refraction and is made incident on the reflecting surface 11 of the crystal 9 after passing through the crystal 9 straight. Since the reflecting surface 11 is formed to a spherical surface having its center at the emitting point of the light beam 2, the reflected light beam is necessarily reflected in the direction in which the light beam enters. Therefore, the light beam 2 emitted from the rear emitting end face 3 of the semiconductor laser chip 1 is reflected by the reflecting surface 11 and necessarily re-coupled with the light emitting position on the end face 3 from which the original light beam is emitted and a high re-coupling efficiency eta is obtained.
其他摘要	用途：通过使用具有形成为球面的反射表面的硅晶体，以半导体激光器件获得高反射耦合效率和具有小尺寸结构的窄发射光谱宽度，其中心位于激光束发射点，同时，也形成为球形表面的入射表面，其中心位于激光束发射点。组成：从半导体激光芯片1的后发射端面3发射的后发射光束2入射在硅晶体9的入射平面10上。由于入射平面10是具有其中心的球面在后发射光2的发射点处，光束直线前进而没有折射，并且在穿过晶体9直线之后入射到晶体9的反射表面11上。由于反射表面11形成为其中心位于光束2的发射点处的球形表面，因此反射光束必须在光束进入的方向上反射。因此，从半导体激光器芯片1的后发射端面3发射的光束2被反射表面11反射，并且必须与发射原始光束的端面3上的发光位置重新耦合。并且获得高的再耦合效率η。
申请日期	1989-01-09
专利号	JP1990181990A
专利状态	失效
申请号	JP1989002509
公开（公告）号	JP1990181990A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70896
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ADACHI AKIHIRO,YAMASHITA JUNICHIRO. Semiconductor laser device. JP1990181990A[P]. 1990-07-16.

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