Semiconductor laser device

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	Semiconductor laser device
其他题名	Semiconductor laser device
	HASEGAWA MITSUTOSHI
	1989-07-26
专利权人	CANON INC
公开日期	1989-07-26
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To reduce short circuits between electrodes and the breakdown of elements on the occasion of manufacturing the elements, by disposing a plurality of semiconductor laser elements in the form of plane, in which one of resonance planes out of a pair of resonance planes facing each other is formed as a part of inner walls of holes in each semiconductor laser element. CONSTITUTION:One of resonance planes 17 out of resonance planes 16 and 17 in respective laser elements 11-15 is formed as a part of inner walls of holes 18 which are provided at disposition planes of respective laser elements 11-15. Thus, the above elements 11-15 are placed freely in order and extraction electrodes 11d-15d of the elements 11-15 can be disposed in such a way that they are placed freely in order at places other than the disposition parts of the elements and further, evenly in non- contact state. For example, out of the electrodes 11d-15d which are extracted independently from current injection regions 11a-15a, the electrodes located at both ends 11d and 15d are extracted toward both sides and the electrodes 12d-14d are extracted to keep away the holes 18 which have the resonance planes 17 as parts of the inner walls of them and then, wire bonding 20 is performed at suitable positions. Thus, short circuits between the electrodes 11d-15d and the breakdown of the elements 11-15 decrease.
其他摘要	目的：通过以平面的形式设置多个半导体激光元件来减少电极之间的短路和元件制造时元件的击穿，其中一对谐振平面位于面对每个谐振平面的一对谐振平面之外另一个形成为每个半导体激光器元件中的孔的内壁的一部分。组成：各个激光元件11-15中的共振平面16和17中的一个共振平面17形成为孔18的内壁的一部分，孔18设置在各个激光元件11-15的布置平面上。因此，上述元件11-15按顺序自由放置，并且元件11-15的引出电极11d-15d可以以这样的方式设置，使得它们在元件的布置部分以外的位置处自由放置。进一步，均匀地处于非接触状态。例如，在独立于电流注入区域11a-15a提取的电极11d-15d中，位于两端11d和15d的电极被提取到两侧，并且电极12d-14d被提取以保持孔18。将谐振面17作为它们的内壁的一部分，然后，在适当的位置进行引线接合20。因此，电极11d-15d之间的短路和元件11-15的击穿减少。
申请日期	1988-01-14
专利号	JP1989186689A
专利状态	失效
申请号	JP1988004805
公开（公告）号	JP1989186689A
IPC 分类号	H01S5/00 \| H01S5/40 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70823
专题	半导体激光器专利数据库
作者单位	CANON INC
推荐引用方式 GB/T 7714	HASEGAWA MITSUTOSHI. Semiconductor laser device. JP1989186689A[P]. 1989-07-26.

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