Optical semiconductor device

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	Optical semiconductor device
其他题名	Optical semiconductor device
	OISHI AKIO; OKAI MAKOTO; TSUJI SHINJI; HIRAO MOTONAO; MATSUMURA HIROYOSHI; HARADA TATSUO
	1988-04-28
专利权人	HITACHI LTD
公开日期	1988-04-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain an optical semiconductor element in which its wavelength characteristic is linearly varied by linearly forming the lattice of diffraction grating not in parallel, and setting intervals between a line perpendicular to one lattice of reference and crossing points of the lattices equally. CONSTITUTION:When a light propagated in a semiconductor layer is coupled with a diffraction grating, a light of wavelength of lambdas = 2.m.n.d (wherein m: natural number, n: effective refractive index of medium, d: period of lattice). Accordingly, when the lattices of the diffraction grating are set not parallel and linearly varied, the period (d) of the lattice is linearly varied. Then, arbitrary one of the formed lattices is considered to be a reference lattice 3, and lines 1, 2 perpendicular thereto are separated at 1 mm. At this time, the interval between a perpendicular line 1 and the crossing points of the lattices are set to 240 nm, and the intervals between a perpendicular line 2 and the crossing points of the lattices are set to 238 nm to be linearly formed. Accordingly, elements are formed at an equal interval in parallel with the lines 1, 2, and when the interval between the elements is set to 500mum, the period of the lattices to be coupled with the elements is varied by 1 mm at an equal interval.
其他摘要	目的：通过线性地形成不平行的衍射光栅的晶格，并且在垂直于一个参考晶格的线和晶格的交叉点之间设置相等的间隔来获得其波长特性线性变化的光学半导体元件。组成：当半导体层中传播的光与衍射光栅耦合时，波长为λ= 2.m.n.d的光（其中m：自然数，n：介质的有效折射率，d：晶格的周期）。因此，当衍射光栅的晶格不平行且线性变化时，晶格的周期（d）线性变化。然后，任意一个形成的晶格被认为是参考晶格3，并且与其垂直的线1,2以1mm分开。此时，垂直线1与格子的交叉点之间的间隔设定为240nm，垂直线2与格子的交叉点之间的间隔设定为238nm，以线性形成。因此，元件以与线1,2平行的相等间隔形成，并且当元件之间的间隔设定为500μm时，与元件耦合的晶格的周期以相等的间隔变化1mm。。
申请日期	1986-10-15
专利号	JP1988098176A
专利状态	失效
申请号	JP1986242936
公开（公告）号	JP1988098176A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70733
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	OISHI AKIO,OKAI MAKOTO,TSUJI SHINJI,et al. Optical semiconductor device. JP1988098176A[P]. 1988-04-28.

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