Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser diode device | |
其他题名 | Semiconductor laser diode device |
MATOBA AKIHIRO; HORIKAWA HIDEAKI; OSHIBA SAEKO; WADA HIROSHI | |
1987-11-27 | |
专利权人 | OKI ELECTRIC IND CO LTD |
公开日期 | 1987-11-27 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To form a driving element as a unitary body by using a conventional laser diode wafer, by a constitution, wherein current narrowing is performed in its p-n-p-n structure in a laser diode part, the laser diode part and a thyristor part are electrically isolated, and optical coupling is possible. CONSTITUTION:An n-InP layer 5 is grown on a flat p-type InP substrate 4. A V groove is formed in the grown wafer. Double heterojunction structures 6-8 comprising InP/InGaAsP are formed so as to bury said groove. The energy gap of the active layer 7 is smaller than those of the upper and lower InP layers 6 and 8. Optical absorption is selectively yielded only in the InGaAsP for the light in the wavelength region from the vicinity of the energy gap of the InGaAsP to the energy gap of InP on the side of a short wavelength. A signal can be inputted by the input of the light on the side of the p-type InGaAsP 7 in a thyristor B. Thus, by using an ordinary laser diode wafer, a modulating element, which can be modulated by an electric signal and an optical signal input, can be formed as a unitary body. |
其他摘要 | 目的:通过使用传统的激光二极管晶片形成作为整体的驱动元件,通过一种结构,其中在激光二极管部件中的pnpn结构中进行电流变窄,激光二极管部件和晶闸管部件是电隔离的,和光学耦合是可能的。组成:在平坦的p型InP衬底4上生长n-InP层5.在生长的晶片中形成V形槽。形成包括InP / InGaAsP的双异质结结构6-8以掩埋所述凹槽。有源层7的能隙小于上和下InP层6和8的能隙。对于从InGaAsP的能隙附近的波长区域中的光,仅在InGaAsP中选择性地产生光吸收。InP在短波长侧的能隙。可以通过在晶闸管B中的p型InGaAsP 7侧上的光的输入来输入信号。因此,通过使用普通的激光二极管晶片,可以通过电信号调制的调制元件和光信号输入,可以形成一个整体。 |
申请日期 | 1986-05-21 |
专利号 | JP1987273790A |
专利状态 | 失效 |
申请号 | JP1986114797 |
公开(公告)号 | JP1987273790A |
IPC 分类号 | H01L27/15 | H01S5/00 | H01S5/026 | H01S5/06 | H01S5/062 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/70703 |
专题 | 半导体激光器专利数据库 |
作者单位 | OKI ELECTRIC IND CO LTD |
推荐引用方式 GB/T 7714 | MATOBA AKIHIRO,HORIKAWA HIDEAKI,OSHIBA SAEKO,et al. Semiconductor laser diode device. JP1987273790A[P]. 1987-11-27. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1987273790A.PDF(151KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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