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OPT OpenIR > 半导体激光器专利数据库

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其他题名	-
	SHINOHARA YASUO
	1987-08-20
专利权人	NIPPON ELECTRIC CO
公开日期	1987-08-20
授权国家	日本
专利类型	授权发明
摘要	PURPOSE:To connect a semiconductor laser crystal piece firmly to a silicon radiator by attaching a titanium-platinum film to the silicon crystal piece and using the radiator on which a tin film is annexed. CONSTITUTION:One surface of a P-type silicon film is polished to a specular surface, a titanium film 1', a platinum film 2' and a gold film 6' are evaporated continuously onto a surface not changed into the specular surface and the surface is used as an electrode, a titanium film 1 and a platinum film 2 are formed onto the surface turned into the specular surface through continuous evaporation, the whole is cut to a discoid shape to form a silicon radiator 3, and a tin film 4 is evaporated onto the platinum film 2. A gold film 6 is evaporated onto the surface of a P-type layer in a semiconductor laser pellet 5, and brought into contact with a tin film 4 on the silicon radiator 1, the tin film 4 on the silicon radiator 1 is melted through heating at a temperature higher than the melting point of tin, and the semiconductor laser pellet 5 and the silicon radiator 3 are combined by the formation of a gold-tin alloy. Since adhesive properties between the tin film 4 and the platinum film 2 are excellent, the semiconductor laser pellet 5 and the silicon radiator 3 are coupled firmly, thus acquiring a semiconductor laser device having superior reproducibility and high reliability.
其他摘要	用途：通过将钛铂膜附着在硅晶片上并使用附有锡膜的散热器，将半导体激光晶体片牢固地连接到硅散热器上。组成：P型硅膜的一个表面抛光到镜面，钛膜1'，铂膜2'和金膜6'连续蒸发到未改变为镜面和表面的表面上用作电极，通过连续蒸发在转变为镜面的表面上形成钛膜1和铂膜2，将整体切割成盘状以形成硅散热器3，并且锡膜4是将金膜6蒸发到半导体激光器芯片5中的P型层的表面上，并使其与硅散热器1上的锡膜4接触，将锡膜4接触到硅膜2上。硅散热器1通过在高于锡的熔点的温度下加热而熔化，并且半导体激光器芯块5和硅散热器3通过形成金 - 锡合金而结合。由于锡膜4和铂膜2之间的粘合性能优异，所以半导体激光器芯片5和硅辐射器3牢固地连接，从而获得具有优异再现性和高可靠性的半导体激光器件。
申请日期	1985-03-22
专利号	JP1987038874B2
专利状态	失效
申请号	JP1985058012
公开（公告）号	JP1987038874B2
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70630
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	SHINOHARA YASUO. -. JP1987038874B2[P]. 1987-08-20.

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JP1987038874B2.PDF（180KB）	专利		开放获取	CC BY-NC-SA	请求全文