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OPT OpenIR > 半导体激光器专利数据库

	No title available
其他题名	No title available
	-
	1972-03-08
专利权人	-
公开日期	1972-03-08
授权国家	英国
专利类型	授权发明
摘要	1,266,084. Lasers. WESTERN ELECTRIC CO. Inc. 10 June, 1970 [16 June, 1969], No. 28085/70. Headings H1C and H1K. [Also in Divisions C4 and G1] In a laser communications system, a semiconductor laser is operated under conditions of temperature and pumping energy such that self-induced spontaneous pulses occur in its output, and the pulse repetition frequency (PRF) is controlled by incident low power microwave energy. The equivalent circuit of Fig. 1 shows a PN junction laser 10 biased by a pumping source 11 which supplies a continuous current of 1??1-3 times the lasing threshold current. At temperatures of 77-110 K spontaneous pulses occur for GaAs diodes, and the PRF is locked on to microwave signals from a source 12. The lazer diode 10 forms the termination of a transmission line connected to the source 12, and the PRF varies according to information from a modulator 13 which controls the microwave frequency. Several lasers may be operated at the same basic PRF, Fig. 2 (not shown), each laser having a phase slightly different from the others to prevent the pulses overlapping. This forms the basis for a time multiplexed communications system, the receiver being a P-I-N or Schottky barrier photodiode or an array thereof. Laser having differing output frequencies may be used. The control of the PRF by microwaves is stated also to be applicable to electron beam or optically pumped semiconductor lasers. Diode manufacture.-The N-type diode sub strate is a slice of Te doped GaAs having a free electron concentration of 3-4??5 x 1018 electrons/cc. A P-type region is diffused into the substrate by the box method, a 2% solution of Zn in Ga saturated with GaAs acting as the source. A diffusion time of 4 hours at 800 C. forms a junction of 1??8 microns. The substrate is then covered with a protective SiO 2 layer and heated with pure As in a quartz ampoule at 850 C. for 4 hours before quenching to 0 C. Windows are then etched in the oxide covering the P-type side and the areas exposed are doped by a ZnAs source using the box method. Electrical contacts are applied to the doped regions, the contacts comprising 500 Ti, 5000 Ag and 1000 Au. The N-type side is then lapped to 105 microns and electrical contacts of 2000 Sn, 4000 Ni and 4000 Au applied. Scribing and cleaving forms individual Fabry-Perot cavities, and the finished laser comprises one of these mounted on a copper heat sink in a microwave package which is connected to a transmission line.
其他摘要	1266084。激光器。西电公司1970年6月10日[1969年6月16日]，第28085/70号。标题H1C和H1K。[也在C4和G1分区]在激光通信系统中，半导体激光器在温度和泵浦能量的条件下工作，使得在其输出中发生自感应自发脉冲，并且脉冲重复频率（PRF）由事件控制低功率微波能量。图1的等效电路示出了由泵浦源11偏置的PN结激光器10，泵浦源11提供激光阈值电流的1~1-3倍的连续电流。在77-110K的温度下，GaAs二极管发生自发脉冲，并且PRF被锁定到来自源12的微波信号。激光二极管10形成连接到源12的传输线的终端，并且PRF根据来自控制微波频率的调制器13的信息。几个激光器可以在相同的基本PRF下操作，图2（未示出），每个激光器具有与其他激光器稍微不同的相位以防止脉冲重叠。这形成了时分多路复用通信系统的基础，接收器是P-I-N或肖特基势垒光电二极管或其阵列。可以使用具有不同输出频率的激光器。微波控制PRF也适用于电子束或光泵浦半导体激光器。二极管制造。-N型二极管基板是Te掺杂的GaAs的切片，其自由电子浓度为3-4×5×10 18 SP /电子/ cc。通过盒法将P型区域扩散到衬底中，2％的Zn溶液在Ga中以GaAs作为源极饱和。在800℃下4小时的扩散时间形成1~8微米的结。然后用保护性SiO 2层覆盖基板，并在850℃下用石英安瓿中的纯As加热4小时，然后淬火至0℃。然后在覆盖P型侧的氧化物中蚀刻窗口并暴露区域使用盒方法用ZnAs源掺杂。将电触点施加到掺杂区域，触点包括500 Ti，5000 Ag和1000 Au。然后将N型侧研磨至105微米并施加2000 Sn，4000 Ni和4000 Au的电触点。划线和切割形成单独的法布里 - 珀罗腔，并且成品激光器包括安装在微波封装中的铜散热器上的其中一个，该微波封装连接到变速器线。
申请日期	1970-06-10
专利号	GB1266084A
专利状态	失效
申请号	GB1266084DA
公开（公告）号	GB1266084A
IPC 分类号	H01S5/062 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/70388
专题	半导体激光器专利数据库
作者单位	-
推荐引用方式 GB/T 7714	-. No title available. GB1266084A[P]. 1972-03-08.

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