Xi'an Institute of Optics and Precision Mechanics,CAS
Reflection-proof coating | |
其他题名 | Reflection-proof coating |
DEIBITSUDO JIYON ERUTON; UIRIAMU JIYON DEBURIN | |
1989-11-20 | |
专利权人 | BRITISH TELECOMMUN PLC |
公开日期 | 1989-11-20 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE: To obtain a coating that has a low-level reflection factor and a sufficient stability and an improved reproducibility by performing coating with hafnium oxide in a light-electricity device with a facet having a reflection- preventing coating for transmitting light radiation. CONSTITUTION: Limiting layers 11 and 12 formed on a substrate 10 made of InP are formed by p-and n-type InP, respectively, and an active layer 13 made of phosphor indium gallium arsenic semiconductor is arranged between the limiting layers 11 and 12 and has a higher refractive index than the two limiting layers 11 and 12. The two edge-part facets of an amplifier are coated with reflection-preventing coatings 14 and 15 formed by hafnium oxide with a reflective index of 87-2.00 and a packing density of 0.91, thus achieving a coating that has an allowable low-level reflection factor, a sufficient stability, and an improved reproducibility. |
其他摘要 | 目的:通过在光电装置中进行氧化铪涂层,获得具有低水平反射系数和足够稳定性以及改善的再现性的涂层,所述光电装置具有用于透射光辐射的防反射涂层的刻面。组成:在由InP制成的基板10上形成的限制层11和12分别由p型和n型InP形成,并且由磷光体铟镓砷半导体制成的有源层13设置在限制层11和12之间。具有比两个限制层11和12更高的折射率。放大器的两个边缘部分小面涂覆有由氧化铪形成的反射防止涂层14和15,其反射率为87-2.00,填充密度为因此,实现了具有允许的低水平反射系数,足够的稳定性和改善的再现性的涂层。 |
主权项 | - |
申请日期 | 1988-12-14 |
专利号 | JP1989287986A |
专利状态 | 失效 |
申请号 | JP1988316065 |
公开(公告)号 | JP1989287986A |
IPC 分类号 | H01S5/00 | G02B1/11 | H01L31/0216 | H01L33/44 | H01S5/028 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/67887 |
专题 | 半导体激光器专利数据库 |
作者单位 | BRITISH TELECOMMUN PLC |
推荐引用方式 GB/T 7714 | DEIBITSUDO JIYON ERUTON,UIRIAMU JIYON DEBURIN. Reflection-proof coating. JP1989287986A[P]. 1989-11-20. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989287986A.PDF(231KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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