Semiconductor material provided with si-doped gainp layer

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	Semiconductor material provided with si-doped gainp layer
其他题名	Semiconductor material provided with si-doped gainp layer
	MAEDA SHIGEO; WATABE SHINICHI; TADATOMO KAZUYUKI
	1992-09-25
专利权人	MITSUBISHI CABLE IND LTD
公开日期	1992-09-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent that a peculiar crosshatched pattern caused by a GaAsP substrate and a dislocation are propagated. CONSTITUTION:An Si-doped GaInP layer 2 is formed on a GaAsP substrate When the Si-doped GaInP epitaxial layer 2 is formed, a layer whose dislocation density is low and whose surface is flat can be obtained. Consequently, when an LED or an LD is manufactured on a semiconductor material by this invention, its performance and its reliability can be enhanced remarkably. The title material is especially effective in an orange to green light-emitting element.
其他摘要	目的：防止由GaAsP衬底和位错引起的特殊交叉阴影图案传播。组成：在GaAsP衬底1上形成Si掺杂的GaInP层2.当形成Si掺杂的GaInP外延层2时，可以获得位错密度低且表面平坦的层。因此，当通过本发明在半导体材料上制造LED或LD时，可以显着提高其性能和可靠性。标题材料在橙色至绿色发光元件中特别有效。
主权项	-
申请日期	1991-02-25
专利号	JP1992269876A
专利状态	失效
申请号	JP1991053857
公开（公告）号	JP1992269876A
IPC 分类号	H01L21/208 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67877
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CABLE IND LTD
推荐引用方式 GB/T 7714	MAEDA SHIGEO,WATABE SHINICHI,TADATOMO KAZUYUKI. Semiconductor material provided with si-doped gainp layer. JP1992269876A[P]. 1992-09-25.