Semiconductor laser and fabricating method therefor

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	Semiconductor laser and fabricating method therefor
其他题名	Semiconductor laser and fabricating method therefor
	WATANABE, MASANORI
	2004-07-01
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2004-07-01
授权国家	美国
专利类型	发明申请
摘要	At least a lower cladding layer, an active layer for generating laser light, a first upper cladding layer, an etching stopper layer and a second upper cladding layer are stacked on a substrate. An impurity for restraining laser light absorption is diffused into the second upper cladding layer along a region where a light-emitting end surface is to be formed, under a condition that allows the etching stopper layer to maintain a function of stopping etching for the second upper cladding layer (First annealing process). Etching is performed until the etching stopper layer is reached such that the second upper cladding layer is left in a ridge shape. The impurity in the second upper cladding layer is re-diffused into the active layer to thereby cause local intermixing of the active layer in a portion extending along the light-emitting end surface and located just under the ridge (Second annealing process).
其他摘要	至少下包层，用于产生激光的有源层，第一上包层，蚀刻停止层和第二上包层堆叠在基板上。在允许蚀刻停止层保持停止第二上部的蚀刻的功能的条件下，用于抑制激光吸收的杂质沿着要形成发光端面的区域扩散到第二上覆层中。包层（第一退火工艺）。执行蚀刻直到到达蚀刻停止层，使得第二上覆层保留为脊形。第二上包层中的杂质再扩散到有源层中，从而引起有源层在沿着发光端面延伸并位于脊的正下方的部分的局部混合（第二退火工艺）。
主权项	A semiconductor laser, which emits laser light through a light-emitting end surface, comprising: a lower cladding layer, an active layer for generating laser light, a first upper cladding layer and an etching stopper layer stacked in this order on a substrate; a second upper cladding layer formed in a shape of a ridge on the etching stopper layer, the ridge extending perpendicularly to the light-emitting end surface; a current blocking layer disposed in regions on both sides of the second upper cladding layer; and an impurity diffused in a portion extending along the light-emitting end surface from the etching stopper layer to the active layer and located at least under the ridge for local intermixing in this portion to restrain laser light absorption, wherein in a region along the light-emitting end surface, the etching stopper layer has a bandgap smaller in portions thereof disposed in positions corresponding to both sides of the ridge than in a portion thereof located just under the ridge.
申请日期	2003-06-30
专利号	US20040125842A1
专利状态	失效
申请号	US10/608227
公开（公告）号	US20040125842A1
IPC 分类号	H01S5/16 \| H01S5/223 \| H01S5/343 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67869
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	WATANABE, MASANORI. Semiconductor laser and fabricating method therefor. US20040125842A1[P]. 2004-07-01.