Semiconductor light emitting device structure

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	Semiconductor light emitting device structure
其他题名	Semiconductor light emitting device structure
	INABA FUMIO; ITO HIROMASA; MIZUYOSHI AKIRA
	1988-05-23
专利权人	RES DEV CORP OF JAPAN
公开日期	1988-05-23
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To conduct the heat by the light emission of light emitting devices efficiently to a heat sink and to enable the light emission in the excellent convergency of light and in high luminance by fixing with conductive adhesives semiconductor light emitting devices formed with a through hole in a semiconductor substrate and the heat sink which has a protuberance which can be inserted in the through hole. CONSTITUTION:A conical frustum-shaped through hole H is formed at the center of a semiconductor substrate B made of n-type GaAs, an active region which includes a p-n junction PN is formed by diffusing Zn along the inner wall of the through hole H, a p-side electrode E1 is provided on the inner wall of the through hole H and on the bottom surface of the substrate B and a ring shape n-side electrode E2 is provided on the upper surface of the substrate B. Since a heat sink 1 is made of a nonconductive material, a thin film layer 5 made of a conductive material for conducting electricity to the electrode E1 on the inner wall of the through hole H is provided on the surface on which light emitting devices are attached of the heat sink The height of a protuberance 2 reaches to nearly a half of the through hole H and conductive adhesives 7 are deposited in the remaining region of the through hole H. The heat generated in the active region is immediately conducted to the heat sink 1 via the conductive adhesives 7 since the through hole H of the light emitting devices and the heat sink 1 can directly be connected by the protuberance 2.
其他摘要	用途：通过发光器件的发光有效地将热量传导到散热器，并通过用导电粘合剂固定具有通孔的半导体发光器件，使得能够以优异的光聚合和高亮度发光。半导体衬底和散热器具有可插入通孔中的突起。组成：锥形平截头体形通孔H形成在由n型GaAs制成的半导体衬底B的中心，包括pn结PN的有源区通过沿通孔H的内壁扩散Zn形成。在通孔H的内壁和基板B的底面上设置p侧电极E1环形n侧电极E2设置在基板B的上表面上。由于散热器1由非导电材料制成，因此由导电材料制成的薄膜层5用于导电到电极E1上。通孔H的内壁设置在散热器1上安装有发光器件的表面上。突起2的高度达到通孔H的近一半，并且导电粘合剂7沉积在通孔H中。由于发光器件和散热器1的通孔H可以通过突起直接连接，所以在有源区中产生的热量通过导电粘合剂7立即传导到散热器1。2。
主权项	-
申请日期	1986-09-25
专利号	JP1988119282A
专利状态	失效
申请号	JP1986227548
公开（公告）号	JP1988119282A
IPC 分类号	H01L33/24 \| H01L33/28 \| H01L33/32 \| H01L33/34 \| H01L33/38 \| H01L33/40 \| H01L33/62 \| H01S5/00 \| H01S5/042 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67841
专题	半导体激光器专利数据库
作者单位	RES DEV CORP OF JAPAN
推荐引用方式 GB/T 7714	INABA FUMIO,ITO HIROMASA,MIZUYOSHI AKIRA. Semiconductor light emitting device structure. JP1988119282A[P]. 1988-05-23.

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