Production method of iii nitride compound semiconductor substrate and semiconductor device

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	Production method of iii nitride compound semiconductor substrate and semiconductor device
其他题名	Production method of iii nitride compound semiconductor substrate and semiconductor device
	KOIKE, MASAYOSHI; NAGAI, SEIJI; TEZEN, YUTA
	2001-11-08
专利权人	TOYODA GOSEI CO., LTD.
公开日期	2001-11-08
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A GaN layer (31) is etched in an insular shape, such as a dot, stripe or lattice, to provide steps with the bottoms thereof serving as recesses in a base substrate (1). Then, GaN (32) is epitaxial-grown laterally with the top and side surfaces of the upper treads of steps as nuclei to thereby bury portions above the lower treads (recesses in the base substrate (1)) of the steps and then grow them upward. Portions above the laterally epitaxial-grown portions of the GaN (32) are defined as areas where the propagation of penetration dislocation of the GaN layer (31) is restrained. Then, the remaining portions of the GaN layer (31) are etched and removed together with the upper-layer GaN (32), and GaN (33) is laterally epitaxial-grown with the remaining top surfaces and side surfaces of the upper treads of the GaN layer (32) as nuclei to thereby provide a GaN substrate (30) having penetration dislocation significantly restrained. The GaN substrate (30) having a small contact surface (GaN layer (31)) with the base substrate (1) can be easily separated.
其他摘要	GaN层（31）以岛状形状蚀刻，例如点，条纹或晶格，以提供其底部用作基础衬底（1）中的凹槽的步骤。然后，GaN（32）横向外延生长，其中台阶的上部胎面的顶表面和侧表面作为核，从而将部分掩埋在台阶的下部胎面（基部基板（1）中的凹部）之上，然后生长它们向上。 GaN（32）的横向外延生长部分上方的部分被定义为抑制GaN层（31）的穿透位错传播的区域。然后，与上层GaN（32）一起蚀刻并去除GaN层（31）的剩余部分，并且利用上部胎面的剩余顶表面和侧表面横向外延生长GaN（33）。 GaN层（32）作为核，从而提供具有显着限制的穿透位错的GaN衬底（30）。具有与基础衬底（1）的小接触表面（GaN层（31））的GaN衬底（30）可以容易地分离。
主权项	-
申请日期	2001-03-02
专利号	WO2001084608A1
专利状态	未确认
申请号	PCT/JP2001/001663
公开（公告）号	WO2001084608A1
IPC 分类号	H01L33/06 \| H01L21/205 \| H01S5/343 \| C30B29/38 \| H01S5/323 \| H01L33/32 \| H01L21/20 \| C30B29/10 \| H01S5/00 \| H01L21/02 \| H01L33/00
专利代理人	FUJITANI, OSAMU
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67834
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	KOIKE, MASAYOSHI,NAGAI, SEIJI,TEZEN, YUTA. Production method of iii nitride compound semiconductor substrate and semiconductor device. WO2001084608A1[P]. 2001-11-08.