Multi-band multiwavelength quantum dot mode-locked lasers

OPT OpenIR > 半导体激光器专利数据库

	Multi-band multiwavelength quantum dot mode-locked lasers
其他题名	Multi-band multiwavelength quantum dot mode-locked lasers
	LIU, JIAREN; LU, ZHENGUO; RAYMOND, SYLVAIN; POOLE, PHILIP; BARRIOS, PEDRO; POITRAS, DANIEL
	2010-06-10
专利权人	NATIONAL RESEARCH COUNCIL OF CANADA
公开日期	2010-06-10
授权国家	美国
专利类型	发明申请
摘要	A multi-band (multi-colour) multiwavelength mode locked laser diode is provided by dynamic phase compensation of a quantum dot active medium. The laser diode is provided with a PIN diode structure where the active medium consists of a plurality of layers of quantum dots such as those produced by self-assembly from known chemical beam epitaxy methods. The multiplicity of bands may be produced by AC Stark splitting, frequency selective attenuation, or by the inclusion of multiple different layers having different, respective, peak ASE emissions. Dispersion compensation within laser facets, waveguides, and the optically active media permit the selection of a fixed dispersion within the cavity. A dynamic group phase change induced by the AC Stark effect permits compensation of the fixed dispersion sufficiently to produce an intraband mode-locked laser. Even interband mode locking was observed.
其他摘要	通过量子点有源介质的动态相位补偿提供多波段（多色）多波长锁模激光二极管。激光二极管具有PIN二极管结构，其中有源介质由多层量子点组成，例如通过已知化学束外延方法的自组装产生的量子点。多个频带可以通过AC斯塔克分裂，频率选择性衰减或通过包括具有不同的，相应的峰值ASE发射的多个不同层来产生。激光刻面，波导和光学活性介质内的色散补偿允许在腔内选择固定的色散。由AC斯塔克效应引起的动态组相变允许足够地补偿固定的色散以产生带内锁模激光器。甚至观察到带间模式锁定。
主权项	A quantum dot PIN diode laser comprising: a p doped cladding and an n doped cladding at opposite faces of an active medium, the active medium consisting essentially of layers of a waveguide material between at least one layer of semiconductor quantum dots having an inhomogeneously broadened gain curve; cavity interfaces including an output coupler where a laser output is emitted, for producing a cavity enclosing the active medium, the cavity having a given cavity loss function, a fixed dispersion, and an amplified spontaneous emission (ASE) spectrum; and an electrical power supply connected to the claddings for supplying pump current through the active medium, the current chosen to produce a dynamic group phase change so that within each of at least two wavelength regions where the cavity loss function is majorized by the ASE spectrum, an effective dispersion is substantially constant, whereby multi-band multiwavelength laser emission is produced by the laser diode through the output coupler and within each band the multiwavelength channels are mode locked.
申请日期	2009-09-25
专利号	US20100142566A1
专利状态	授权
申请号	US12/585830
公开（公告）号	US20100142566A1
IPC 分类号	H01S5/065 \| H01S5/34 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67661
专题	半导体激光器专利数据库
作者单位	NATIONAL RESEARCH COUNCIL OF CANADA
推荐引用方式 GB/T 7714	LIU, JIAREN,LU, ZHENGUO,RAYMOND, SYLVAIN,et al. Multi-band multiwavelength quantum dot mode-locked lasers. US20100142566A1[P]. 2010-06-10.