Strain quantum well type semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Strain quantum well type semiconductor laser
其他题名	Strain quantum well type semiconductor laser
	ISHIKAWA MAKOTO
	1992-05-06
专利权人	NEC CORP
公开日期	1992-05-06
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make high-output operation possible and to raise the reliability by providing a laminated construction of a p-type AlxGa1-xAs clad layer having a mesa section, and by laminating a GaAs layer containing at least one of n-type dopants such as Si, Se, Sn, Te, etc., added by specified densities, on the p-type clad layer on both sides of the mesa section. CONSTITUTION:An n-AlxGa1-xAs clad layer 2, an active layer 3 of InGaAs/ AlGaAs-SCH structure, a p-AlxGa1-xAs clad layer 4, and a p-GaAs cap layer 5 are laminated successively on an n-GaAs board Next, a mesa having a width of 5mum is formed with SiO2 as a mask in the p-clad layer 4, and a high- density n-GaAs buried layer 6 is selectively formed in the sesa side section with Si and Se as dopants. The carrier density is made 5X10cm or more. The n-type GaAs buried layer 6 having a high density of 5X10cm or more in the sesa side section has an absorption loss for the light too having wavelengths longer than a band end wavelength of 0.86mum, because of a band tail effect by impurities. And the n-GaAs buried layer 6 operates as an absorbing medium even for the oscillated light of 0.9mum or more from an InGaAs strain quantum well layer 12.
其他摘要	用途：通过提供具有台面截面的p型Al x Ga 1-x As包覆层的层叠结构，并通过层叠包含至少一种n型掺杂剂的GaAs层，使高输出操作成为可能并提高可靠性作为Si，Se，Sn，Te等，以规定的密度添加在台面部分两侧的p型覆层上。组成：n-AlxGa1-xAs包层2，InGaAs / AlGaAs-SCH结构的有源层3，p-AlxGa1-xAs包层4和p-GaAs帽层5依次层叠在n-GaAs上接下来，在p-覆层4中形成具有5μm宽度的台面，其中SiO2作为掩模，并且在sesa侧部分中选择性地形成高密度n + -GaAs掩埋层6。 Si和Se作为掺杂剂。载流子密度为5×10 18 cm -3或更高。在sesa侧部分中具有5×10 18 cm -3或更高密度的n型GaAs掩埋层6对于波长比波段末端波长为0.86μm的光具有吸收损耗，因为由杂质引起的带尾效应并且，即使对于来自InGaAs应变量子阱层12的0.9μm或更大的振荡光，n + -GaAs掩埋层6也用作吸收介质。
主权项	-
申请日期	1990-09-25
专利号	JP1992132288A
专利状态	失效
申请号	JP1990254412
公开（公告）号	JP1992132288A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67515
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ISHIKAWA MAKOTO. Strain quantum well type semiconductor laser. JP1992132288A[P]. 1992-05-06.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1992132288A.PDF（307KB）	专利		开放获取	CC BY-NC-SA	请求全文