Semiconductor lasers utilizing optimized n-side and p-side junctions

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	Semiconductor lasers utilizing optimized n-side and p-side junctions
其他题名	Semiconductor lasers utilizing optimized n-side and p-side junctions
	FARMER, JASON NATHANIEL; DEVITO, MARK ANDREW; HUANG, ZHE; CRUMP, PAUL ANDREW; GRIMSHAW, MICHAEL PETER; THIAGARAJAN, PRABHURAM; DONG, WEIMIN; WANG, JUN
	2009-07-02
专利权人	NLIGHT PHOTONICS CORPORATION
公开日期	2009-07-02
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.
其他摘要	提供一种半导体激光器及其形成方法。 n侧和p侧结被独立优化以改善载流子流动。选择用于n侧包覆层的材料以产生对价带隙偏移比的小传导，同时选择用于p侧包覆层的材料以产生对价带带偏移比的大传导。
主权项	A semiconductor diode laser, comprising: a substrate; an n-type buffer layer formed on the substrate; an n-type cladding layer comprised of a first materials system formed on the n-type buffer layer, said first materials system having a first conduction band to valence band offset ratio; a first confinement region formed on the n-type first cladding layer; an active region formed on the first confinement layer; a second confinement region formed on the active layer; a p-type cladding layer comprised of a second materials system formed on the second confining layer, said second materials system having a second conduction band to valence band offset ratio, wherein said second conduction band to valence band offset ratio is larger than said first conduction band to valence band offset ratio; and a p-type contact layer formed on the p-type cladding layer.
申请日期	2008-03-26
专利号	US20090168826A1
专利状态	失效
申请号	US12/079475
公开（公告）号	US20090168826A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67466
专题	半导体激光器专利数据库
作者单位	NLIGHT PHOTONICS CORPORATION
推荐引用方式 GB/T 7714	FARMER, JASON NATHANIEL,DEVITO, MARK ANDREW,HUANG, ZHE,et al. Semiconductor lasers utilizing optimized n-side and p-side junctions. US20090168826A1[P]. 2009-07-02.