Semiconductor laser diode and method of fabricating the same

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser diode and method of fabricating the same
其他题名	Semiconductor laser diode and method of fabricating the same
	KWAK, JOON-SEOP; CHOI, KWANG-KI; HA, KYOUNG-HO; KIM, YEON-HEE; SHIM, JONG-IN
	2006-05-25
专利权人	SAMSUNG ELECTRO_MECHANICS CO., LTD.
公开日期	2006-05-25
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser diode and a method of fabricating the same are provided. The semiconductor laser diode includes: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.
其他摘要	提供一种半导体激光二极管及其制造方法。半导体激光二极管包括：基板;形成在基板上的预定化合物半导体层;在化合物半导体层上形成下部包层;在下包层上形成有源层;上包层，形成在有源层上，并在其中间形成脊;在脊的至少一侧上形成预定深度的沟槽，以从上包层穿透有源层;除了脊的顶表面和沟槽的内壁之外，在上包层的表面上形成的电流阻挡层;接触层形成在脊的顶表面上;以及形成在接触层和电流阻挡层的顶表面上的第一电极。
主权项	A semiconductor laser diode comprising: a substrate; a predetermined compound semiconductor layer formed on the substrate; a lower cladding layer formed on the compound semiconductor layer; an active layer formed on the lower cladding layer; an upper cladding layer formed on the active layer and having a ridge formed in the middle thereof; trenches formed to a predetermined depth on at least one side of the ridge to penetrate the active layer from the upper cladding layer; a current blocking layer formed on surfaces of the upper cladding layer, except a top surface of the ridge, and inner walls of the trenches; a contact layer formed on the top surface of the ridge; and a first electrode formed on top surfaces of the contact layer and the current blocking layer.
申请日期	2005-09-09
专利号	US20060109881A1
专利状态	失效
申请号	US11/221872
公开（公告）号	US20060109881A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67439
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRO_MECHANICS CO., LTD.
推荐引用方式 GB/T 7714	KWAK, JOON-SEOP,CHOI, KWANG-KI,HA, KYOUNG-HO,et al. Semiconductor laser diode and method of fabricating the same. US20060109881A1[P]. 2006-05-25.