Wavelength control type semiconductor laser

OPT OpenIR > 半导体激光器专利数据库

	Wavelength control type semiconductor laser
其他题名	Wavelength control type semiconductor laser
	FURUYAMA HIDETO; OKUDA HAJIME; HIRAYAMA YUUZOU; UEMATSU YUTAKA
	1985-06-17
专利权人	KOGYO GIJUTSUIN
公开日期	1985-06-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To inhibit the variation of the state of laser oscillation by external reflected beams by giving a coupling coefficient between the progressive waves and reflected waves of laser beams at least two values and widening the spectral width of a wavelength control type semiconductor laser. CONSTITUTION:Groove sections 12 are formed on a substrate 11, and a distance up to a diffraction grating 13 from an active layer 15 differs at a central section and both end sections in the direction orthogonal to the direction of a resonator. The thickness of an optical waveguide 14 is thinned at both ensections and thickened at the central section, and the coupling coefficients of both end sections and the central section are made K1 and K2. A laser using the diffractin grating 13 is brought to a DFB laser having a coupling coefficient in which K1 and K2 are mixed. When the DFB laser is laser-oscillated at a mode of n=1, two wavelengths of lambda1 and lambda2 are oscillated. When the difference of the wavelengths of lambda1 and lambda2 is slight, two oscillating wavelengths of lambda1 and lambda2 is slight, two oscillating wavelengths couple by several slight wavelength extent, and oscillating spectrum, the width thereof is widened, which looks as through being oscillated by one wavelength is obtained.
其他摘要	目的：通过给出激光束的行波和反射波之间的耦合系数至少两个值并加宽波长控制型半导体激光器的光谱宽度来抑制外部反射光束激光振荡状态的变化。组成：凹槽部分12形成在基板11上，并且从有源层15到衍射光栅13的距离在中心部分和两个端部在与谐振器的方向垂直的方向上不同。光波导14的厚度在两个部分处变薄并且在中心部分处变厚，并且两个端部和中心部分的耦合系数为K1和K2。使用衍射光栅13的激光器被带到具有耦合系数的DFB激光器，其中K1和K2混合在一起。当DFB激光器以n = 1的模式激光振荡时，λ1和λ2的两个波长振荡。当λ1和λ2的波长差异很小时，λ1和λ2的两个振荡波长很小，两个振荡波长耦合几个轻微的波长范围，振荡的光谱，其宽度加宽，看起来像是通过振荡获得一个波长。
主权项	-
申请日期	1983-11-22
专利号	JP1985111488A
专利状态	失效
申请号	JP1983218671
公开（公告）号	JP1985111488A
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/67377
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN
推荐引用方式 GB/T 7714	FURUYAMA HIDETO,OKUDA HAJIME,HIRAYAMA YUUZOU,et al. Wavelength control type semiconductor laser. JP1985111488A[P]. 1985-06-17.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1985111488A.PDF（389KB）	专利		开放获取	CC BY-NC-SA	请求全文