Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor member for light emitting device | |
| 其他题名 | Semiconductor member for light emitting device |
| INABA FUMIO; ITO HIROMASA; TSUJI MASASHIGE; TADATOMO KAZUYUKI; MIZUYOSHI AKIRA | |
| 1987-06-23 | |
| 专利权人 | INABA FUMIO |
| 公开日期 | 1987-06-23 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To obtain good emitting characteristics of the vertical direction with respect to the substrate by performing epitaxial growth on the outer periphery of a columnar projection provided on a semiconductor substrate so as to have a P-N junction in the direction of vertical disposition of the columnar projection, and emitting in the direction of vertical disposition. CONSTITUTION:A mask layer m1 consisting of a SiO2 layer or the like is provided on a substrate 1', a columnar projection 2 is formed by etching, and after providing a mask layer m2 as necessary, the projection 2 is dipped into a solution nEP, performing the liquid phase epitaxial growth of a first semiconductor layer 2A' consisting of N-type GaAs on the outer periphery of the projection. The projection 2 is dipped into a solution pEP to epitaxially grow a second semiconductor 2B' consisting of P-type GaAs, and the mask layers are removed, obtaining an objective semiconductor member having a P-N junction PN1 in the direction of vertical disposition of the projection. Based on this P-N junction in the direction of vertical disposition of the columnar projection, emission vertical to the substrate can be obtained with an excellent light output-current characteristics. |
| 其他摘要 | 用途：通过在设置在半导体衬底上的柱状凸起的外周上进行外延生长，以在柱状凸起的垂直布置方向上具有PN结，从而获得相对于衬底的垂直方向的良好发射特性。，并沿垂直配置的方向发射。组成：在基板1'上提供由SiO2层等组成的掩模层m1，通过蚀刻形成柱状突起2，并且在根据需要提供掩模层m2之后，将突起2浸入溶液nEP中，在突起的外周上进行由N型GaAs构成的第一半导体层2A'的液相外延生长。将突起2浸入溶液pEP中以外延生长由P型GaAs组成的第二半导体2B'，并去除掩模层，从而获得在投影的垂直布置方向上具有PN结PN1的物镜半导体构件。基于在柱状突起的垂直布置方向上的该P-N结，可以获得具有优异的光输出电流特性的垂直于基板的发射。 |
| 主权项 | - |
| 申请日期 | 1985-12-12 |
| 专利号 | JP1987139364A |
| 专利状态 | 失效 |
| 申请号 | JP1985280755 |
| 公开（公告）号 | JP1987139364A |
| IPC 分类号 | H01L33/24 | H01L33/28 | H01L33/32 | H01L33/40 | H01S5/00 | H01L33/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/67190 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INABA FUMIO |
| 推荐引用方式 GB/T 7714 | INABA FUMIO,ITO HIROMASA,TSUJI MASASHIGE,et al. Semiconductor member for light emitting device. JP1987139364A[P]. 1987-06-23. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1987139364A.PDF（266KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论