Mode selection laser

OPT OpenIR > 半导体激光器专利数据库

	Mode selection laser
其他题名	Mode selection laser
	CHUNG, IL-SUG; RAN, QIJIANG
	2014-04-17
专利权人	DANMARKS TEKNISKE UNIVERSITET
公开日期	2014-04-17
授权国家	世界知识产权组织
专利类型	发明申请
摘要	The invention relates to a semiconductor mode selection laser, particularly to a VCSEL laser (200) having mode selection properties. The mode selection capability of the laser is achieved by configuring one of the reflectors (15,51) in the resonance cavity so that a reflectivity of the reflector (15) varies spatially in one dimension or two dimensions. Accordingly, the reflector (15) with spatially varying reflectivity is part both of the resonance cavity and the mode selection functionality of the laser. A plurality of the lasers configured with different mode selectors, i.e. different spatial reflector variations, may be combined to generate a laser beam containing a plurality of orthogonal modes. The laser beam may be injected into a few- mode optical fiber, e.g. for the purpose of optical communication. The VCSEL may have intra-cavity contacts (31,37) and a Tunnel junction (33) for current confinement into the active layer (34). An air-gap layer (102) may be provided between the upper reflector (15) and the SOI wafer (50) acting as a substrate. The lower reflector may be designed as a high-contrast grating (51) by etching.
其他摘要	本发明涉及一种半导体模式选择激光器，尤其涉及一种具有模式选择特性的VCSEL激光器（200）。通过在谐振腔中配置反射器（15,51）中的一个来实现激光器的模式选择能力，使得反射器（15）的反射率在一维或二维空间上变化。因此，具有空间变化的反射率的反射器（15）是谐振腔和激光器的模式选择功能的一部分。可以组合配置有不同模式选择器的多个激光器，即不同的空间反射器变化，以产生包含多个正交模式的激光束。激光束可以注入几模光纤，例如光纤。用于光通信。 VCSEL可以具有腔内触点（31,37）和隧道结（33），用于电流限制到有源层（34）中。气隙层（102）可以设置在上反射器（15）和用作衬底的SOI晶片（50）之间。下反射器可以通过蚀刻设计为高对比度光栅（51）。
主权项	A vertical cavity surface emitting laser (100, 200, 300, 1700) having a vertical optical axis (110), comprising - a central structure (111) comprising an active region (104) configured to generate light, - an optical resonant cavity comprising a first reflector (106, 51, 240, 1710) arranged below the active region and a second reflector (101, 15, 1751) arranged above the active region, wherein the first and second reflectors are arranged to reflect light back to the active region, wherein the first or the second reflector is also arranged to partially transmit light away from the active region, and wherein the reflectivity of the second reflector varies from a starting high reflectivity to a middle low reflectivity being low relative to the high reflectivity and to an ending high reflectivity over at least a fraction of the width of the active region in at least one direction in a horizontal plane perpendicular to the optical axis for selection of a single transverse mode in the cavity, - a high contrast grating having grating elements (11) of dielectric material separated from each other by a separation medium (14), where the refractive index of the grating elements is higher than the refractive index of the separation medium, where the grating elements have widths (tg) and where the sum of pairs of the grating widths (tg) and separation distances (ts) between adjacent grating elements define periods (T), and where the high contrast grating is configured by varying the widths (tg) and the periods (T) so that at least one of the grating elements has a width which is different from widths of other grating elements so as to obtain the varying reflectivity of the second reflector, wherein - the functions of the second reflector for reflecting light back to the active region and for obtaining the varying reflectivity are embodied exclusively by the high contrast grating.
申请日期	2013-10-14
专利号	WO2014056508A1
专利状态	未确认
申请号	PCT/DK2013/050329
公开（公告）号	WO2014056508A1
IPC 分类号	H01S5/183 \| H01S5/02 \| H01S5/30 \| H01S5/065 \| H01S5/12
专利代理人	PLOUGMANN & VINGTOFT A/S
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66754
专题	半导体激光器专利数据库
作者单位	DANMARKS TEKNISKE UNIVERSITET
推荐引用方式 GB/T 7714	CHUNG, IL-SUG,RAN, QIJIANG. Mode selection laser. WO2014056508A1[P]. 2014-04-17.