MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications

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	MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications
其他题名	MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications
	SHARPS, PAUL R.; HOU, HONG QI; LI, NEIN-YI; KANJOLIA, RAVI
	2002-08-01
专利权人	SHARPS PAUL R.
公开日期	2002-08-01
授权国家	美国
专利类型	发明申请
摘要	TBHy is demonstrated as an efficient and a less carbon-containing N precursor for the growth of high-quality InGaAsN by MOCVD at lower growth temperatures. The photovoltaic characteristics of 20 eV InGaAsN solar cells, such as open-circuit voltage, short-circuit current, fill factor and efficiency are improved significantly by using TBHy compared to using DMHy. This demonstration can also be applied to other InGaAsN-based optoelectronic and electronic devices. Therefore, this invention is extremely important to expedite the demonstration of next-generation prototype products such as 3 mum-InGaAsN-epitaxial VCSELs for high-speed optical communications, low-power Npn InGaP/InGaAsN/GaAs HBTs and InGaP/AlGaAs/InGaAsN HEMTs for wireless applications, and high-efficiency multiple-junction InGaP/GaAs/InGaAsN/Ge solar cells for space power systems.
其他摘要	TBHy被证明是一种有效且含碳量较低的N前体，用于在较低的生长温度下通过MOCVD生长高质量的InGaAsN。与使用DMHy相比，使用TBHy可显着改善20 eV InGaAsN太阳能电池的光伏特性，如开路电压，短路电流，填充因子和效率。该演示还可以应用于其他基于InGaAsN的光电和电子器件。因此，本发明对于加速下一代原型产品的演示极为重要，例如用于高速光通信的3μm-InGaAsN-外延VCSEL，低功率Npn InGaP / InGaAsN / GaAs HBT和InGaP / AlGaAs / InGaAsN HEMT。用于无线应用，以及用于空间电源系统的高效多结InGaP / GaAs / InGaAsN / Ge太阳能电池。
主权项	A method for metal organic chemical vapor deposition (MOCVD) comprising the step of growing InGaAsN using tertiarybutylhydrazine (TBHy) as a nitrogen (N) precursor.
申请日期	2001-09-17
专利号	US20020102847A1
专利状态	失效
申请号	US09/956540
公开（公告）号	US20020102847A1
IPC 分类号	C23C16/30 \| C30B25/02 \| H01L21/205 \| H01L31/078 \| H01L31/18 \| H01L21/20 \| H01L21/36 \| H01L21/44
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66629
专题	半导体激光器专利数据库
作者单位	SHARPS PAUL R.
推荐引用方式 GB/T 7714	SHARPS, PAUL R.,HOU, HONG QI,LI, NEIN-YI,et al. MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications. US20020102847A1[P]. 2002-08-01.