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Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating
其他题名Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating
CHANG-HASNAIN, CONNIE; CHASE, CHRISTOPHER; RAO, YI
2012-11-01
专利权人THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
公开日期2012-11-01
授权国家世界知识产权组织
专利类型发明申请
摘要A surface emitting laser apparatus is formed using a patterned silicon-on- insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices.
其他摘要使用图案化的绝缘体上硅(SOI)类衬底形成表面发射激光器装置,该衬底用掩埋的亚波长高对比度光栅图案化并适于键合至少包含有源区的半VCSEL器件和上镜,用于创建VCSEL。 VCSEL的波长或VCSEL器件阵列中的任何单个VCSEL的波长可以响应于SOI样基板中下镜的HCG特性的变化而设定,或者在半VCSEL内的下镜上方的区域中设定。 。本发明的VCSEL器件和制造方法对于许多应用和器件是有益的。
主权项1 . A surface-emitting laser apparatus, comprising: a half-VCSEL laser heterostructure having an upper mirror reflector, and an active region beneath said upper mirror reflector; and a high-contrast grating (HCG) pre-patterned silicon-on-insulator (SOI) substrate comprising a buried high contrast grating disposed between spacing layers as a lower mirror reflector; wherein attaching said half-VCSEL to said HCG pre-patterned silicon-on- insulator (SOI) substrate results in a surface-emitting laser device.
申请日期2012-04-28
专利号WO2012149497A2
专利状态未确认
申请号PCT/US2012/035697
公开(公告)号WO2012149497A2
IPC 分类号H01S5/183
专利代理人O'BANION, JOHN
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/66534
专题半导体激光器专利数据库
作者单位THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
推荐引用方式
GB/T 7714
CHANG-HASNAIN, CONNIE,CHASE, CHRISTOPHER,RAO, YI. Vertical cavity surface emitting lasers with silicon-on-insulator high contrast grating. WO2012149497A2[P]. 2012-11-01.
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